United Monolithic Semiconductors CHR0100A-SJ, CHR0100a Datasheet

CHR0100a

Ref. : DSCHR01000161 -9-Jun-00 1/6 Specifications subject to change without notic e

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : [phone] - Fax : [phone]

5.8GHz I/Q Mixer

GaAs Monolithic Microwave IC

Description

The CHR0100a is a single chip MMIC
including an I/Q mixer and a RF gain block
that minimises the overall conversion loss of
the receiver and provides the RF signal to
the mixer through a power divider.
The circuit is manufactured with the P­HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithogr aphy.
It is supplied in chip form or in ceramic
leadless chip carrier.

Main Features

■ 5.8GHz centre frequency

■ DC-50MHz IF bandwidth

■ Low noise figure

■ Low I/Q phase & amplitude unbalance

■ Chip size : 1.77 x 1.37 x 0.10 mm

Vd Vg

RF

LO

IQ

Block diagram

Conversion gain (RF to I; RF to Q)

and phase unbalance

Main Characteristics

Tamb = +25°C

Symbol Parameter Min. Typ. Max. Unit

Fop Operating freq uency range 5.725 5.8 5.875 GHz

Cg Conversion gain (RF to I; RF to Q) -4 -2.5 dB

Plo LO input power 6 dBm

ESD Protections : Electrostatic discharge sensitive device observe handling precaution !

CHR0100a

5.8GHz Image rejection mixer

Ref. : DSCHR01000161 -9-Jun-00 2/6 Specifications subject to change without notic e

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: [phone] - Fax : [phone]

Electrical Characteristics

Tamb = +25°C

Symbol Parameter Test

conditions

Min. Typ. Max. Unit

Fop Operating freq uency range 5.725 5.8 5.875 GHz

BWif

IF frequency band DC 50 MHz
Cg Conversion gain, RF to I or RF to Q (1) -4 -2.5 dB
NF Noise figure (DSB), RF to I or RF to Q

IF=10MHz

5dB

Pif_1dB I or Q IF output power at 1dB

compression gain

-5 dBm

Plo LO input power 5 8 dBm

∆ϕ

I/Q phase unbalance 10 15 °

∆Cg

I/Q amplitude unbalance 0.5 1.0 dB
Vd Positive bias voltage 4 V

Id Bias current 15 25 mA

(1) Conversion gain will be 3dB higher after I/Q combination.

Absolute Maximum Ratings (1)

Tamb = +25°C

Symbol Parameter Values Unit

Vd Positive supply voltage 6 V
Vg Negative supply voltage -2 to 0 V

Pin Maximum peak input power overdrive (2) 10 dBm

Top Operating temperature range -50 to 70 °C

Tstg Storage temperature r ange -55 to 155 °C

(1) Operation of this device above anyone of these parameters may cause permanent damage

(2) Duration < 1s.