United Monolithic Semiconductors CHM2378a-99F-00 Datasheet
CHM2378a
Ref. : DSCHM23781269 -26-Sep.-01
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
W-band Dual Channel Mixer
GaAs Monolithic Microwave IC
Description
The CHM2378 is a dual channel mixer.
Each mixer cell is a balanced structure
based on a six quarter wave ring. The nonlinear devices are high quality Schottky
diodes providing low conversion loss and
very low 1/f noise.
This circuit is manufactur ed with the BESMMIC process: 1 µm Schottky diode
device, air bridges, via holes through the
substrate, stepper lithogr aphy.
It is available in chip form.
Main Features
n W-band LO and RF frequency range
n Low conversion loss
n IF from DC to 100MHz
n High LO/RF isolation
n High LO/AM noise rejection
n Very low 1/f noise
n Low LO input power
n Automatic assembly oriented
n Chip size: 1.98 x 2.07 x 0.10 mm
RF1
IF2 IF1
RF2
LO
Dual channel mixer block diagram
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
75 75,5 76 76,5 77 77,5 78
LO frequency (GHz)
Conversion gai n (dB)
Typical conversion characteristic
LO power = 8dBm ; IF=10MHz
(measurement in test fixture)
Main Characteristics
Tamb. = 25°C
Symbol Parameter Min Typ Max Unit
F_lo, F_rf LO,RF frequency 76 76.5 77 GHz
F_if IF frequency range DC-100 MHz
Lc Conversion loss 7.5 9.5 dB
I_lo/rf LO/RF isolation 25 dB
N_if IF noise @ 100kHz -162 dBm/Hz
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
CHM2378a
W-band Dual Channel Mixer
Ref. DSCHM23781269 -26-Sep.-01
2/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Full operating temperature range, used according to section “Typical assembly and bias
configuration”
Symbol Parameter Min Typ Max Unit
F_lo, F_rf LO,RF frequency 76 77 GHz
F_if IF frequency range DC-100 MHz
Lc Conversion loss 4.5 7.5 9.5 dB
|(d(∆Lc)/dT)* ∆T|
Conversion loss difference f rom
chip to chip versus temperature
0.3
(to be confirmed)
dB
P_lo LO input power 4 7 11 dBm
P_RF_1dB RF input power at 1 dB -3 0 dBm
VSWR_lo
LO port VSWR (50Ω)
2:1 2.5:1
VSWR_rf
RF port VSW R (50Ω)
2:1 2.5:1
IMP_if IF load impedance (1) 200
Ω
I_lo/rf LO/RF isolation 20 25 dB
I_rf1/rf 2 Isolation between RF channels 25 30 dB
I_rfi/rfj Isolation between RF and IF
channels
25 30 dB
R_lo_am LO AM noise rejection (SSB) 25 30 dB
Noise figure for I F=1kHz (2) 34 39 dB
Noise figure for I F=10kHz (2) 28 33 dB
Noise figure for I F=100kHz (2) 20.5 25.5 dB
NF
Noise figure for I F=200kHz (2) 17 22 dB
+V Positive supply voltage (3) 4.5 V
+I Positive supply current (3) 1.5 2.5 mA
Top Operating t em per ature range -40 +100 °C
(1) The IF optimum load f or c onversion los s is 200Ω. For minimum nois e figure this load can be lower,
the best results have been obtained on 50Ω.
(2) Measured on 200Ω IF impedance.
(3) An external resistor controls the bias current (see section “Typical Assembly and Bias
Configuration”)
W-band Dual Channel Mixer
CHM2378a
Ref. DSCHM23781269 -26-Sep.-01
3/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Absolute Maximum Ratings (1)
Symbol Parameter Values Unit
+V Supply voltage 6 V
+I Supply current (for one input ) 2.5 mA
P_lo Maximum peak input power overdrive at LO port (2) 12 dBm
P_rf_cw Maximum input power at RF port (3) 3 dBm
Tstg Storage temperature range -55 to +125 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s
(3) Continuous wave mode.
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