W-band Mixer
GaAs Monolithic Microwave IC
Description
The CHM2179a is a balanced Schottky
diode mixer based on a six quarter wave
ring structure. This circuit is manufactured
with the BES-MMIC process: 1 µm
Schottky diode device, air bridges, via
holes through the substrate, stepper
lithography.
It is available in chip form.
LO
-5
CHM2179a
RF
IF
Main Features
■ W-band LO and RF frequency range
-7,5
-10
■ Low conversion loss
■ IF from DC to 100MHz
Conversion loss (dB)
-12,5
■ High LO/RF isolation
■ High LO/AM noise rejection
■ Very low IF noise
-15
75 75,5 76 76,5 77 77,5 78
■ Low LO input power
■ Small chip size: 1.53 x 1.17 x 0.10 mm
Typical conversion characteristic
LO power = 5dBm ; IF=10MHz
(measurement in test fixture)
Main Characteristics
Tamb. = 25°C
Symbol Parameter Typ Unit
F_LO,F_RF LO,RF frequency range 76-77 GHz
F_IF IF frequency range DC-100 MHz
Lc Conversion loss 7.5 dB
LO Frequency (GHz)
I_LO/RF LO/RF isolation 20 dB
N_IF IF noise density @ 100kHz -158 dBm/Hz
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCH21790192 - 22-Jun-00 1/6 Specifications subject to change without notic e
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHM2179a
W-band Mixer
Electrical Characteristics
Tamb. = 25°C, used according to section “Typical bias and IF configuration” and “Typical
assembly and RF configuration”
Symbol Parameter Min Typ Max Unit
F_LO,F_RF LO,RF frequency range 76-77 GHz
F_IF IF frequency range DC-100 MHz
Lc Conversion loss 7.5 9 dB
P_LO LO input power 3 5 7 dBm
VSWR_LO
VSWR_RF
IF_load IF load impedance 200
I_LO/RF LO/RF isolation 17 22 dB
R_AM_LO LO AM noise rejection 27 dB
N_IF IF noise density @ 100kHz (1) -158 dBm/Hz
Id Supply current (2) 1 mA
(1) Measured on 50Ω IF load impedance.
(2) See on chapter “Typical bias and IF configuration”
LO port VSWR (50Ω)
RF port VSWR (50Ω)
2:1
2:1
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol Parameter Values Unit
Id Supply current 3 mA
P_LO Maximum peak input power overdrive at LO port (2) 10 dBm
P_RF Maximum peak input power overdrive at RF port (2) 10 dBm
Ω
Top Operating temperature range -40 to +100 °C
Tstg Storage temperature range -55 to +125 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s
Ref. : DSCH21790192 - 22-Jun-00 2/6 Specifications subject to change without notic e
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09