United Monolithic Semiconductors CHM1291-99F-00 Datasheet
CHM1291
Ref. : DSCHM12912266 - 23-Sept.-02 1/6 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
25-32GHz Single Side Band Mixer
GaAs Monolithic Microwave IC
Description
The CHM1291 is a multifunction chip (MFC)
which integrates a LO buffer amplifier and a subharmonically balanced diodes mixer for 2LO
suppression and image rejection. It is usable
both for up-conversion and down-conversion. It
is designed for a wide range of applications,
typically commercial communication systems for
broadband local access (LMDS). The backside
of the chip is both RF and DC grounded. This
helps simplify the assem bl y process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
• Broadband performances : 25-32GHz
• 11dB conversion Loss
• 15dBc image rejection
• +5dBm LO input power
• +5dBm input power (1dB gain comp.)
• Low DC power consumption, 55mA@3.5V
• Chip size : 2.06 x 1.25 x 0.10 mm
Main Characteristics
Tamb. = 25°C
Parameter Min Typ Max Unit
FRF RF frequency range 25 32 GHz
FLO LO frequency range 12 15.5 GHz
FIF IF frequency range 0.1 3 GHz
Lc Conversion Loss 11 15 dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
25-32GHz SSB Mixer
CHM1291
Ref. : DSCHM12912266 - 23-Sept.-02 2/6 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V Id=55mA
Symbol Parameter Min Typ Max Unit
FRF RF frequency range 25 32 GHz
FLO LO frequency range 12 15.5 GHz
FIF IF frequency range 0.1 3 GHz
Lc Conversion Loss 11 15 dB
PLO LO Input power +5 dBm
2xLO Leak 2xLO Leakage (for PLO=+5dBm) -35 -30 dBm
Img Rej Image Rejection (1) 10 15 dBc
P1dB Input power at 1dB gain compression -2 +1 dBm
P03 Input power at 3dB gain compression +3 dBm
IP3 Input 3rd order intercept point +9 dBm
LO Match LO VSWR 2.0:1
RF Match RF VSWR 2.0:1
IF Match IF VSWR 2.0:1
Sz Chip size 2.6 mm²
Id Bias current 55 mA
(1) With external quadrature hybrid coupler (reference on request). The minimal value depends
on the quality of the external quadrature combiner.
Current source biasing network is recommended.
A bonding wire of typically 0.1 to 0.15 nH will improve the accesses matching.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol Parameter Values Unit
Vd Drain bias voltage 4.0 V
Id Drain bias current 100 mA
Ta Operating temperature range -40 to +85 °C
Tstg Storage temperature range -55 to +155 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Loading...