United Monolithic Semiconductors CHM1290 Datasheet
CHM1290
20-30GHz SUB-HARMONICALLY PUMPED MIXER
GaAs Monolithic Microwave IC
Description
The CHM1290 is a MFC which integrates a s elf
biased LO buffer amplifier and a subharmonically diodes mixer for 2LO suppression
It is usable both for up-conversion and downconversion. It is designed for a wide range of
applications, typically commercial
communication systems for broadband local
access (LMDS). The back side of the chip is bo th
RF and DC grounds. This helps simplify the
assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate le ngth, capacit ies over via
holes, via holes through the substrate, air
bridges and electron beam gate lithography.
It is available in chip form.
Main Features
• Broadband performance : 20-30GHz
• 10dB conversion Loss
• 29dB 2LO to RF isolation
• -4dBm LO input power
• -3dBm input power 1 dB compression
• Low DC power consumption, 33mA@4.0V
• Chip size : 0.86 X 1.28 X 0.10 mm
Main Characteristics
Tamb. = 25°C
Parameter Min Typ Max Unit
FRF RF frequency range 20 30 GHz
FLO LO frequency range 10 15 GHz
FIF IF frequency range DC 6 GHz
Lc Conversion Loss 10 12 dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHM12902045 - 14-Feb.-02 1/6 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz SHP Mixer
CHM1290
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 4.0V Id=33mA
Symbol Parameter Min Typ Max Unit
FRF RF frequency range 20 30 GHz
FLO LO frequency range 10 15 GHz
FIF IF frequency range DC 6 GHz
Lc Conversion Loss 10 12 dB
PLO LO Input power -4 8 dBm
2xLO Leak 2xLO Leakage (for PLO=-4dBm) 30 dBm
IP1dB Input power at 1dB gain compression -3 0 3 dBm
LO Match LO Matching 2.0:1
RF Match RF Matching 2.0:1
IF Match IF Matching 2.0:1
Sz Chip size 1.1 mm²
Id Bias current 33 mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol Parameter Values Unit
Vd Drain bias voltage 5.0 V
Id Drain bias current 50 mA
Pin Maximum peak input power overdrive (2) TBD dBm
Ta Operating temperature range -40 to +85 °C
Tstg Storage temperature range -55 to +155 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHM12902045 - 14-Feb.-02 2/6 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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