United Monolithic Semiconductors CHM1193 Datasheet
K-Band Mixer
GaAs Monolithic Microwave IC
Description
The CHM1193 is a balanced Schottky
diode mixer based on a six quarter wave
ring structure. It could be use in r eceiver or
transmitter part.
This circuit is manufactured with the
Schottky diode process : 1 µm Schottky
diode device, air bridges, via holes through
the substrate, stepper lithog r aphy.
It is available in chip form.
An electrically identical chip with a mirror
drawing versus de LO side is available
under the part number CHM1192. These
two MMICs could be helpful in a TX, RX
architecture module.
Main Features
■ 36-38 GHz LO frequency range
■ IF from 1 to 3 GHz
■ Low conversion loss up & down
■ High LO/RF isolation
■ Low LO input power
■ Small chip size: 1.53 x 1.53 x 0.10 mm
CHM1193
LO
IF
RF
-2
IF=2GHz
-4
-6
-8
-10
Conversion gain (dB)
-12
35 36 37 38 39 40
Typical conversion characteristic
(measurement in test fixture)
LO Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol Parameter Typ Unit
F_LO, LO frequency range 36-38 GHz
F_IF IF frequency range 1 - 3 GHz
Lc Conversion loss 7 dB
I_LO/RF LO/RF isolation 30 dBc
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHM11930077 - 17-Mar-00 1/6 Specifications subject to change without notic e
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHM1193
K-Band MIXER
Electrical Characteristics
Tamb. = 25°C
Symbol Parameter Min Typ Max Unit
F_LO LO frequency range 36 38 GHz
F_IF IF frequency range 1 3 GHz
Lc Conversion loss @ P_LO=7dBm (1) 7 dB
P_LO LO input power 5 7 9 dBm
P-1dB Input power for 1dB compression
@ P_LO = 9dBm
VSWR_LO
VSWR_RF
VSWR_IF
I_LO/RF LO/RF isolation 30 dBc
(1) On wafer measurements.
(2) Depends on the wire bonding conditions and on the external matching net work .
LO port VSWR (50Ω) (2)
RF port VSWR (50Ω) (2)
IF port VSWR (50Ω) (2)
0dBm
2.5:1
2.5:1
2.5:1
Absolute Maximum Ratings (3)
Tamb = +25°C
Symbol Parameter Values Unit
P_LO Maximum peak input power overdrive at LO port (4) 10 dBm
P_RF Maximum peak input power overdrive at RF port (4) 10 dBm
P_IF Maximum peak input power overdrive at IF port (4) 10 dBm
Top Operating temperature range -40 to +85 °C
Tstg Storage temperature range -55 to +125 °C
(3) Operation of this device above anyone of these parameters may cause permanent damage.
(4) Duration < 1s
Ref. : DSCHM11930077 - 17-Mar-00 2/6 Specifications subject to change without notic e
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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