United Monolithic Semiconductors CHM1190 Datasheet

K Band Mixer

GaAs Monolithic Microwave IC

Description

The CHM1190 is a balanced Schottky
diode mixer based on a six quarter wave
ring structure. It could be use in r eceiver or
transmitter part.
This circuit is manufactur ed with the BES­MMIC process: 1 µm Schottky diode
device, air bridges, via holes through the
substrate, stepper lithogr aphy.
An electrically identical chip with a mirror
drawing versus de LO side is available
under the part number CHM1191. These
two MMICs could be helpful in a TX, RX
architecture module.
It is available in chip form.

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CHM1190

IF=2GHz

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Main Features

■ 22-24 GHz LO frequency range

■ IF from 1 to 3 GHz

■ Low conversion loss up & down

■ High LO/RF isolation

■ Low LO input power

■ Small chip size: 1.73 x 1.53 x 0.10 mm

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-10

Conversion gain (dB)

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21 22 23 24 25

LO Frequency (GHz)

Typical conversion characteristic

(measurement in test fixture)

Main Characteristics

Tamb. = 25°C

Symbol Parameter Typ Unit

F_LO, LO frequency range 22-24 GHz

F_IF IF frequency range 1 - 3 GHz

Lc Conversion loss @ P-LO = 7dBm 7 dB

I_LO/RF LO/RF isolation 30 dBc

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

Ref. :DSCHM11909025

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United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : [phone] - Fax : [phone]

Specifications subject to change without notice

CHM1190

K band Mixer

Electrical Characteristics

Tamb. = 25°C

Symbol Parameter Min Typ Max Unit

F_LO LO frequency range 22 24 GHz

F_IF IF frequency range 1 3 GHz

Lc Conversion loss @ P-LO = 7dBm (1) 7 dB

P_LO LO input power 5 7 9 dBm

P-1dB Input 1dB compression 7 dBm
VSWR_LO
VSWR_RF

VSWR_IF

I_LO/RF LO/RF isolation 30 dBc

(1) On wafer measurements.
(2) Depends on the wire bonding conditions and on the external matching network.

LO port VSWR (50Ω) (2)
RF port VSWR (50Ω) (2)
RF port VSWR (50Ω) (2)

2.5:1

2.5:1

2.5:1

Absolute Maximum Ratings (1)

Tamb = +25°C

Symbol Parameter Values Unit

P_LO Maximum peak input power overdrive at LO port (2) 10 dBm
P_RF Maximum peak input power overdrive at RF port (2) 10 dBm

P_IF Maximum peak input power overdrive at IF port (2) 10 dBm

Top Operating temperature range -40 to +85 °C

Tstg Storage temperature range -55 to +125 °C

(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s

Ref. : DSCHM11909025

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: [phone] - Fax : [phone]

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Specifications subject to change without notice