United Monolithic Semiconductors CHA6042-99F-00 Datasheet
13–16GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6042 is a four-stag e pHEMT HPA
MMIC designed for VSAT ground terminals
and other radio applications. The CHA6042
provides 32dBm nominal output power at
1dB gain compression over the 13-16GHz
frequency range, and 32dB small-signal
gain. This product will be available in chip
form.
35
CHA6042
Main Features
¾ Freq uency Range: 13-16GHz
¾ Gain: 32dB
¾ Output Power (P
¾ Output TOI: 40dBm
¾ Input Ret ur n Loss: 15dB
¾ Output Ret urn Loss: 13dB
¾ Bias: 9V, 1A
¾
Dimensions: 2.34 x 1.36 x 0.07mm
): 32dBm
-1dB
0
GAIN (dB)
30
25
Output Return Loss (dB)
20
S. S. GAIN (dB)
15
10
11 12 13 14 15 16 17 18
Ref. : DSCHA6042218 - 06-Aug.-02
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Input Return Loss (dB)
FREQUENCY (GHz)
1/6
Specifications subject to change without notice
-5
-10
-15
RETURN L O SS (d B)
-20
-25
CHA6042
Predicted Output Power at 1dB Gain Compression
36
35
34
33
32
31
30
29
28
OUTPUT POWER (P-1dB) (dBm)
27
13-16GHz High Power Amplifier
26
12 13 14 15 16 17
FREQUE NCY (G Hz)
Absolute Maximum Ratings
Tamb. = 25 °C (1)
Symbol Parameter Values Unit
Vds Drain bias voltage_small signal 10.5 V
Ids Drain bias current_small signal 1500 mA
Vgs Gate bias voltage -2 to +0.4 V
Vdg Maximum Drain Gate voltage (Vd-Vg) +12 V
Pin Maximum peak input power overdrive (2) +18 dBm
Ta Operating Temperat ur e Range (3) -45 t o +80 C
Tstg Storage Temperature Range -55 to +125 C
1. Operation of this device above any one of these parameter s m ay cause perm anent dam age.
2. Duration < 1 s
3. AuSn solder mount to CuW or CuMo carrier assumed
Ref. : DSCHA6042218 - 06-Aug.-02 2/6 Specifications subject to change without notic e
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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