United Monolithic Semiconductors CHA5296-99F-00 Datasheet
CHA5296
27-30GHz High Pow er Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5296 is a high gain three-stage
monolithic high power am plif ier . It is designed for
a wide range of applications, from military to
commercial communication systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process on 50µm substrate thickness, 0.25µm
gate length, via holes through the substrate, air
bridges and electron beam gate lithography.
It is available in chip form.
Main Features
■ Performances : 27-30GHz
■ 29dBm output power @ 1dB comp. gain
■ 15 dB ± 1dB gain
■ DC power consumption, 850mA @ 6V
■ Chip size : 3.80 x 2.52 x 0.05 mm
20
15
10
5
0
-5
-10
Gain & RLosses (dB)
-15
-20
20 22 24 26 28 30 32 34 36
Typical on jig Measurements
S11
Frequency (GHz)
S22
Main Characteristics
Tamb. = 25°C
Symbol Parameter Min Typ Max Unit
Fop Operating frequency range 27 30 GHz
G Small signal gain 14 15 dB
P1dB Output power at 1dB gain compression 28 29 dBm
Id Bias current 850 1000 mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA52962147 - 27-May-02 1/6 Specifications subject to change without notic e
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5296
27-30GHz High Power Amplifier
Electrical Characteristics
Tamb = +25°C, Vd = 6V Id #900mA
Symbol Parameter Min Typ Max Unit
Fop Operating frequency range (1) 27 30 GHz
G Small signal gain (1) 14 15 dB
∆G
Is Reverse isolation 50 dB
P1dB Pulsed output power at 1dB compression (1) 28 29 dBm
P03 Output power at 3dB gain compression (1) 29 30 dBm
IP3 3rd order intercept point (2) 41 dBm
PAE Power added efficiency at Psat 12 16 %
VSWRin Input VSWR (2) 5:1
VSWRout Output VSWR (2) 2.5:1
Tj Junction temperature for 80°C backside 170 °C
Id Bias current @ small signal 850 1000 mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Small signal gain flatness (1)
±1
dB
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol Parameter Values Unit
Vd Drain bias voltage 6.25 V
Id Drain bias current 1450 mA
Vg Gate bias voltage -2.5 to +0.4 V
Vgd Negative gate drain voltage ( = Vg - Vd) -8 V
Pin Maximum peak input power overdrive (2) +18 dBm
Ta Operating temperature range -40 to +80 °C
Tstg Storage temperature range -55 to +125 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA52962147 - 27-May-02 2/6 Specifications subject to change without notic e
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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