United Monolithic Semiconductors CHA5293a-99F-00 Datasheet
17-24GHz High Pow er Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5293a is a high gain three-stage
monolithic high power am plif ier . It is designed for
a wide range of applications, from military to
commercial communication systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
■ Performances : 17-24GHz
■ 30dBm output power @ 1dB comp. gain
■ 17 dB ± 1dB gain
■ DC power consumption, 800mA @ 6V
■ Chip size : 4.01 x 2.52 x 0.05 mm
CHA5293a
Vd1 Vd2 Vg3 Vd3
Vg1,2 Vd2 Vg3 Vd3
25
20
15
10
5
0
-5
Gain & RLoss (dB)
-10
-15
-20
12 14 16 18 20 22 24 26 28
Frequency (GHz)
S22
S11
Typical on jig Measurements
Main Characteristics
Tamb. = 25°C
Symbol Parameter Min Typ Max Unit
Fop Operating frequency range 17 24 GHz
G Small signal gain 16 17 dB
P1dB Output power at 1dB gain compression 29 30 dBm
Id Bias current 800 mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA52932123 -03-May-02 1/7 Specifications subject to change without notic e
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5293a
17-24GHz High Power Amplifier
Electrical Characteristics
Tamb = +25°C, Vd = 6V Id #800mA
Symbol Parameter Min Typ Max Unit
Fop Operating frequency range (1) 17 24 GHz
G Small signal gain (1) 16 17 dB
∆G
Is Reverse isolation 50 dB
P1dB Pulsed output power at 1dB compression (1) 29 30 dBm
P03 Output power at 3dB gain compression (1) 32 dBm
IP3 3rd order intercept point (2) 42 dBm
PAE Power added efficiency at 1dB comp. 20 %
VSWRin Input VSWR (2) 3:1
VSWRout Output VSWR (2) 3:1
Tj Junction temperature for 80°C backside 155 °C
Id Bias current @ small signal 800 1000 mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Small signal gain flatness (1)
±1
dB
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol Parameter Values Unit
Vd Maximum drain bias voltage with Pin max=12dBm 6.25 V
Id Maximum drain bias current 1450 mA
Vg Gate bias voltage -2.5 to +0.4 V
Ig Gate bias current -5 to +5 mA
Vgd Minimum negative gate drain voltage ( Vg - Vd) -8 V
Pin Maximum input power overdrive (2) 15 dBm
Tch Maximum channel temperature 175 °C
Ta Operating temperature range -40 to +80 °C
Tstg Storage temperature range -55 to +125 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA52932123 -03-May-02 2/7 Specifications subject to change without notic e
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
17-24GHz High Power Amplifier
Typical on Jig Measurements
( including 1dB loss for the gain & 0.5dBm for the power)
Bias conditions: Vd=6V, Vg tuned for Id = 800mA
25
20
15
10
5
0
CHA5293a
-5
Gain & RLoss (dB)
-10
-15
-20
12 14 16 18 20 22 24 26 28
S22
S11
Frequency (GHz)
Linear Gain & Return Losses versus frequency
20
19
18
17
16
15
Gain (dB)
14
13
16 GHz 18 GHz 20 GHz
22 GHz 24GHz Série2
1800
1700
1600
1500
1400
1300
1200
1100
12
11
10
14 16 18 20 22 24 26 28 30 32
Drain current (mA) @ 20GHz
Output Power (dBm)
Output power versus frequency & Drain current @ 20GHz
Ref. : DSCHA52932123 -03-May-02 3/7 Specifications subject to change without notic e
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
1000
900
800
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