United Monolithic Semiconductors CHA5292a-99F-00 Datasheet

37-40GHz Medium Power Amplifier
g
GaAs Monolithic Microwave IC

Description

The CHA5292a is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.

Main Features

Performances : 37-40GHz
24dBm output power @ 1dB comp. gain
24 dB ± 1dB gain
DC power consumption, 500mA @ 3.5V
Chip size : 3.43 x 1.44 x 0.07 mm
-12
-16
-20
CHA5292a
IN
24 20 16 12
8 4 0
-4
-8
30 31 32 33 34 35 36 37 38 39 40
Vd1 Vd2 Vd3 Vd4
V
1 Vg2 Vg3 Vg4
Typical on jig Measurements
S21 (dB) S11 (dB) S22 (dB )
Frequency (GHz)
OUT
Main Characteristics
Tamb. = 25°C
Symbol Parameter Min Typ Max Unit
Fop Operating frequency range 37 40 GHz
G Small signal gain 24 dB
P1dB Output power at 1dB gain compression 24 dBm
Id Bias current 500 mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA52922149 - 29-May-02 1/6 Specifications subject to change without notic e
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5292a
37-40GHz Medium Power Amplifier
Electrical Characteristics
Tamb = +25°C, Vd = 3.5V Id =500mA
Symbol Parameter Min Typ Max Unit
Fop Operating frequency range (1) 37 40 GHz
G Small signal gain (1) 24 dB
G
Is Reverse isolation 35 dB
P1dB Pulsed output power at 1dB compression (1) 24 dBm
P03 Output power at 3dB gain compression (1) 26 dBm
VSWRin Input VSWR (2) 3:1
VSWRout Output VSWR (2) 3.5:1
Tj Junction temperature for 80°C backside 160 °C Id Bias current @ small signal 500 650 mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Small signal gain flatness (1)
±1
dB
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol Parameter Values Unit
Vd Maximum Drain bias voltage with Pin max=0dBm +4.0 V
Id Drain bias current 750 mA
Vg Gate bias voltage -2 to +0.4 V
Ig Gate bias current -1.8 to +1.8 mA
Vdg Maximum drain to gate voltage (Vd - Vg) +6.0 V
Pin Maximum input power overdrive (2) +3.0 dBm
Tch Maximum channel temperature +175 °C
Ta Operating temperature range -40 to +80 °C
Tstg Storage temperature range -55 to +125 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.
Ref. : DSCHA52922149 - 29-May-02 2/6 Specifications subject to change without notic e
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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