United Monolithic Semiconductors CHA5093-99F-00 Datasheet
22-26GHz High Power Amplifier
Frequency
GaAs Monolithic Microwave IC
Description
The CHA5093 is a high gain three-stage
monolithic high power amplifier. It is designed
for a wide range of applications, from military to
commercial communication systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
CHA5093
Gain & RLoss (dB)
25
Main Features
Performances : 22-26GHz
29dBm output power
20 dB ± 1.5dB gain
DC power consumption, 600mA @ 6V
Chip size : 3.27 x 2.47 x 0.10 mm
20
15
10
-10
-15
-20
-25
5
0
-5
S11
15
S22
20
25 30
Typical on Wafer Measurements
Main Characteristics
Tamb. = 25°C
Symbol Parameter Min Typ Max Unit
Fop Operating frequency range 22 26 GHz
G Small signal gain 18 20 dB
P1dB Output power at 1dB gain compression 28 29 dBm
Id Bias current 600 900 mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA50930129 -09 May-00 1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5093
22-26GHz High Power Amplifier
Electrical Characteristics
Tamb = +25°C, Vd = 6V
Symbol Parameter Min Typ Max Unit
Fop Operating frequency range (1) 22 26 GHz
G Small signal gain (1) 18 20 dB
∆G
Is Reverse isolation (1) 50 dB
P1dB Pulsed output power at 1dB compression (1) 28 29 dBm
P03 Output power at 3dB gain compression 29.5 dBm
IP3 3rd order intercept point (2) 40 dBm
PAE Power added efficiency at 1dB comp. 19 %
VSWRin Input VSWR 2.3:1
VSWRout Output VSWR 2.3:1
Tj Junction temperature for 80°C backside 170 °C
Id Bias current 600 900 mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Small signal gain flatness (1)
±1.5
dB
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol Parameter Values Unit
Vd Drain bias voltage 6 V
Id Drain bias current 1200 mA
Vg Gate bias voltage -2.5 to +0.4 V
Vgd Negative gate drain voltage ( = Vg - Vd) -8 V
Pin Maximum peak input power overdrive (2) +12 dBm
Ta Operating temperature range -40 to +80 °C
Tstg Storage temperature range -55 to +155 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA50930129 -09 May-00 2/8 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
22-26GHz High Power Amplifier
CHA5093
Typical On Wafer Scattering Parameters
Bias Conditions : Vd = +2V, Vg = -0.1V
Freq S11 S11 S12 S12 S21 S21 S22 S22
GHz dB /° dB /° dB /° dB /°
1 -0,59 169,8 -83,89 -9,2 -51,47 60 -0,31 -10,4
2 -0,38 158,6 -94,7 -97,3 -66,17 -14,6 -0,04 -22,2
3 -0,57 146,5 -90,83 40,1 -62,89 156,2 -0,04 -33,3
4 -0,92 131,5 -87,53 -65,9 -55,62 -37,1 -0,07 -44,6
5 -1,81 112,8 -91,02 -172,1 -54,96 70,7 -0,08 -55,8
6 -3,56 88,7 -88,88 -109,5 -49,83 87,6 -0,09 -66,9
7 -6,86 56,1 -93,06 -18,3 -45,68 47 -0,1 -78,2
8 -11,49 2 -89,41 -123,6 -28,33 121,7 -0,12 -90
9 -11,08 -75,8 -77,69 -57,9 -13,56 56,8 -0,2 -102,3
10 -7,5 -122,7 -73,31 -105,8 -4,53 -7,7 -0,29 -114,9
11 -5,5 -150,3 -67,65 -103,5 2,35 -66,5 -0,45 -128,5
12 -4,65 -170,2 -64,52 -128,8 9,41 -125,1 -0,84 -143,5
13 -4,49 174,7 -60,09 -138,2 15,11 147,6 -1,9 -157
14 -4,54 161,9 -57,15 -165,4 13,29 74,3 -2,08 -168,6
15 -5,01 149 -54,69 165,9 12,35 33,4 -2,48 174,5
16 -5,95 137,3 -52,41 131,9 13,33 -1,5 -3,31 155,3
17 -7,54 125,2 -54,05 103,3 15,41 -38,2 -4,38 133,5
18 -10,08 116,3 -54,29 99,6 17,95 -81,4 -5,87 109,1
19 -13,87 114,1 -53,07 70 20,07 -128,3 -7,16 81
20 -18,32 120,1 -55,69 61,4 21,69 179,9 -8,31 49
21 -21,53 -166,1 -55,41 49,3 22,71 128,5 -9,09 15,1
22 -13,29 -152,4 -53,16 28,6 23,28 77,4 -8,63 -13,6
23 -10,62 -174,2 -56,67 -23,7 23,74 24,1 -8,36 -36,8
24 -12,11 161,8 -64,73 -101,8 23,55 -30,6 -7,39 -53
25 -23,82 -175,5 -61,49 109,9 22,98 -88,4 -6,07 -67,6
26 -11,02 -104,7 -55,53 89,3 21,32 -147 -4,94 -82,5
27 -5,56 -127,3 -53,1 73 18,44 157,6 -4,11 -97
28 -3,27 -144,5 -49,46 59,2 15,1 107,4 -3,64 -109,9
29 -2,09 -159,2 -49,07 21,2 11,56 59,1 -3,14 -121,3
30 -1,33 -170,7 -47,23 2,2 7,22 12,8 -2,61 -131,9
31 -0,78 178,1 -47,06 -20,4 2,57 -29,9 -2,29 -143,6
32 -0,62 168,3 -50,11 -56,1 -2,99 -69,1 -2,08 -154,5
33 -0,41 159,5 -55,89 -68,4 -9,66 -104 -1,96 -165,5
34 -0,4 151,3 -61,66 -95,4 -22,01 -110,4 -1,99 -175,4
35 -0,38 144 -66,3 -14,3 -14,55 -69,1 -1,86 175,9
36 -0,37 136,5 -59,52 15,6 -14,65 -130,2 -1,68 164,4
37 -0,42 129,1 -57,63 -6 -18,82 -168,4 -1,73 153,9
38 -0,6 121,2 -46,51 1,1 -23,23 162,3 -1,74 143,6
39 -0,71 114,6 -45,63 -40,8 -27,11 137,4 -1,8 132
40 -0,75 106,8 -50,77 -87,7 -29,94 111,9 -1,92 121,4
Ref. : DSCHA50930129 -09 May-00 3/8 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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