United Monolithic Semiconductors CHA4094-99F-00 Datasheet
36-40GHz High Pow er Amplifier
GaAs Monolithic Microwave IC
Description
The CHA4094 is a high gain broadband threestage balanced monolithic power amplifier. It is
designed for a wide range of applications, from
military to commercial communication systems.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
CHA4094
Typical on wafer measurements :
15
Main Features
■ Broadband performances
■ 22 dBm output power ( 1dB gain comp. )
■ 9 dB ± 1 dB gain
■ Chip size : 1.65 X 2.05 X 0.10 mm
10
5
0
-5
-10
(dB)
-15
-20
-25
-30
28 30 32 34 36 38 40 42
Gain
OUT
Frequency (GHz)
IN
Main Characteristics
Tamb. = 25°C
Symbol Parameter Min Typ Max Unit
Fop Operating frequency range 36 40 GHz
G Small signal gain 7 9 dB
P1dB Output power at 1dB gain compression 22 dBm
Id Bias current 750 920 mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA40949349 – 15 Dec. 99 1/4 Specifications subject to change without notic e
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA4094
36-40GHz High Power Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3 = 3.5Volts
Symbol Parameter Min Typ Max Unit
Fop Operating frequency range (1) 36 40 GHz
G Small signal gain (1) (2) 7 9 dB
∆G
Is Reverse isolation (1) 30 dB
P1db Pulsed Output power at 1dB gain compression (1) 22 dBm
VSWRin Input VSWR (1) 2.0:1
VSWRout Output VSWR (1) 2.0:1
Id Bias current (3) 750 920 mA
(1) These values are representative of on-wafer m easurem ents that are made without bonding
wires at the RF ports. In the case of a jig or a module CW mode operation, the typical output
power may be around 2dB less.
(2) Vd1, 2, 3 = 2Volts
(3) Depends on Biasing point, see application note for recommended biasing point
Small signal gain flatness (1) (2)
± 1
Absolute Maximum Ratings
Tamb. = 25°C (1)
dB
Symbol Parameter Values Unit
Vd Drain bias voltage 4 V
Id Drain bias current 1200 mA
Vg Gate bias voltage -2 to +0.4 V
Ta Operating temperature range -40 to +85 °C
Tstg Storage tem per at ur e range -55 to +155 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHA40949349 – 15 Dec. 99 2/4 Specifications subject to change without notic e
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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