United Monolithic Semiconductors CHA4092-99F-00 Datasheet
20-30GHz High Power Amplifier
(dB)
GaAs Monolithic Microwave IC
Description
The CHA4092 is a high gain broadband threestage balanced monolithic power amplifier. It is
designed for a wide range of applications, from
military to commercial communication systems.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
CHA4092
Typical on wafer measurements :
Main Features
þ Broadband performances : 20-30GHz
þ 22 dBm output power ( 1dB gain comp. )
þ 17 dB ± 1.5 dB gain
þ Chip size : 1.65 X 2.15 X 0.10 mm
20
15
10
5
0
-5
-10
-15
-20
-25
-30
15 20 25 30 35
Gain
IN
OUT
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol Parameter Min Typ Max Unit
Fop Operating frequency range 20 30 GHz
G Small signal gain 16 17 dB
P1dB Output power at 1dB gain compression 22 dBm
Id Bias current 700 900 mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA40928021 1/4 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA4092
20-30GHz High Power Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3 = 3.5Volts
Symbol Parameter Min Typ Max Unit
Fop Operating frequency range (1) 20 30 GHz
G Small signal gain (1) (2) 16 17 dB
∆G
Is Reverse isolation (1) 30 dB
P1db Pulsed Output power at 1dB gain compression (1) 22 dBm
VSWRin Input VSWR (1) 2.0:1
VSWRout Output VSWR (1) 2.0:1
Id Bias current 700 900 mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports. In the case of a jig or a module CW mode operation, the typical
output power may be around 2dB less.
(2) Vd1,2,3 = 2Volts
Small signal gain flatness (1) (2)
± 1.5
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol Parameter Values Unit
dB
Vd Drain bias voltage 4 V
Id Drain bias current 1200 mA
Vg Gate bias voltage -2 to +0.4 V
Ta Operating temperature range -40 to +85 °C
Tstg Storage temperature range -55 to +155 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHA40928021 2/4 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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