United Monolithic Semiconductors CHA4042-99F-00 Datasheet

23–34GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA4042 is a three-stage pHEMT HPA MMIC designed for point-to-point and multi-point radio, and other Ka-band applications. The CHA4042 provides 25dBm nominal output power at 1dB gain compression over the 23-34GHz frequency range, and 20dB small signal gain. This product will be available in chip form.
25
20
Predicted Gain & Return
Predicted Gain & Return Loss
Gain
CHA4042
Main Features
¾ Frequency Range: 23-34GHz ¾ Gain: 20dB ¾ Output Power (P ¾ Output TOI: 33dBm ¾ Input Return Loss: 18dB ¾ Output Retur n Loss: 11dB ¾ Bias: 6V, 300mA
¾
Dimensions: 1.93 x 1.09 x 0.07mm
-1dB
): 25dBm
0
-5
15
10
S.S. Gain (dB)
5
0
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Ref. : DSCHA40422218 -06-Aug.-02
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Output Rloss
Input Rloss
Frequency (GHz)
1/6
United Monolithic Semiconductors S.A.S.
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
-10
-15
Return Loss (dB)
-20
-25
CHA4042
28 27 26 25 24 23 22 21
23-34GHz High Power Amplifier
Predicted Output Power at 1-dB Gain Compression
20 19
OUTPUT POWER (P-1dB) (dBm)
18
20 22 24 26 28 30 32 34
FREQUENCY (GHz)
Absolute Maximum Ratings
T
= 25 °C (1)
amb
Symbol Parameter Values Unit
Vds Drain bias voltage_small signal 6.25 V
Ids Drain bias current_small signal 450 mA Vgs Gate bias voltage -2 to +0.4 V Vdg Maximum Drain Gate voltage (Vd-Vg) +8 V
Pin Maximum peak input power overdrive (2) +15 dBm
Ta Operating Temperat ur e Range (3) -45 to +80 C
Tstg Storage Temperature Range -55 to +125 C
Operation of this device above any one of these parameters may cause
permanent damage.
Duration < 1 s
AuSn solder mount to CuW or CuMo carrier assumed
Ref. : DSCHA40422218 -06-Aug.-02 2/6 Specifications subject to change without notic e
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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