United Monolithic Semiconductors CHA2294-99F-00 Datasheet

35-40GHz Low Noise, Variable Gain Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2294 is a high gain four-stage
monolithic low nois e amplifier with variable ga in.
It is designed for a wide range of applications,
from military to commercial communication
systems.The back s ide of the chip is bot h RF and
DC grounded. This helps simplify the assembly
process.

The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.

Main Features

• Frequency range : 35-40GHz

• 4.0dB Noise Figure.

• 22dB gain

• Gain control range: 15dB

• Low DC power consumption, 120mA @ 5V

• Chip size : 2.32 X 1.235 X 0.10 mm

CHA2294

V5 Vd2 Vd3,4

IN

Vg1 Vg2 Vg3.4 Vc

Typical on wafer measurements :Gain & NF

26
24
22
20
18
16
14
12
10

8
6
4
2
0

35 36 37 38 39 40

Frequency (GHz)

Gain (dB) NF (dB)

OUT

Main Characteristics

Tamb. = 25°C

Fop Operating frequency range 35 40 GHz

G Small signal gain 22 dB

NF Noise figure 4 dB

Gctrl Gain control range with Vc vari ati on 15 dB

Id Bias current 120 mA

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

Ref. : DSCHA22942183 -01-July-02 1/6 Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: [phone] - Fax : [phone]

Parameter Min Typ Max Unit

35-40GHz LNA VGA

CHA2294

Electrical Characteristics for Broadband Operation

Tamb = +25°C, V5=Vd2=Vd,3,4= 5V

Symbol Parameter Min Typ Max Unit

Fop Operating frequency range 35 40 GHz

G Small signal gain (1) 22 dB

∆G

Is Reverse isolation (1) 50 dB

NF Noise figure with Vc=1.2V 4 dB

Gctrl Gain control range versus Vc 15 dB

P1dB Output power at 1dB compression with Vc=1.2V 11 dBm

VSWRin Input VSWR (1) 2.0:1

VSWRout Output VSWR (1) 1.5:1

Vd DC voltage V5= Vd2=Vd3,4

Id1 Bias current (2) with Vc=1.2V 20 mA

Id Bias current total (3) with Vc=1.2V 120 mA

(1) These values are representative of on-wafer measurements that are made without bonding

wires at RF ports.
(2) For optimum noise figure, the bias current Id1 should be adjust to 20mA with Vg1 voltage.
(3) With Id1=20mA, adjust Vg2,3,4 voltage for a total drain current around 120mA.

Small signal gain flatness (1) ±1.0 dB

Vc

-1.5 5 [-0.7, 1.2] 1.3

V
V

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol Parameter Values Unit

Vd Maximum Drain bias voltage +5.25 V

Id Maximum drain bias current 200 mA
Vg Gate bias voltage -2.5 to +0.4 V
Vc Maximum Control bias voltage +1.5 V

Vdg Maximum drain to gate voltage (Vd - Vg) +5.0 V

Pin Maximum input power overdrive (2) +15 dBm

Tch Maximum channel temperature +175 °C

Ta Operating temperature range -40 to +85 °C

Tstg Storage temperature range -55 to +125 °C

(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.

Ref. : DSCHA22942183 -01-July-02 2/6 Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: [phone] - Fax : [phone]