United Monolithic Semiconductors CHA2190-99F-00 Datasheet

20-30GHz Low No ise Amplifier

self biased

GaAs Monolithic Microwave IC

Description

The circuit is a two-stages self biased wide
band monolithic low noise amplifier.

The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithogr aphy.
It is supplied in chip form.

Main Feature

§ Broad band performance 20-30GHz

§ 2.2dB noise figure

§ 15dB gain, ± 0.5dB gain f latness

§ Low DC power consumption, 50mA

§ 20dBm 3rd order intercept point

§ Chip size : 1.670 x 1.03x 0.1mm

CHA2190

18
14
10

6
2

-2

-6

-10

dBSij & NF ( dB )

-14

-18

-22

-26

dBS11 dBS21 dBS22 NF

14 16 18 20 22 24 26 28 30 32 34 36

Frequency ( GHz )

Main Characteristics

Tamb = +25°C

Symbol Parameter Min Typ Max Unit

NF Noise figure at freq : 40GHz 2.2 3 dB

G Gain 13 15 dB

∆G

ESD Protections : Electrostatic discharge sensitive device observe handling precautions !

Ref : DSCHA21902036 -05-Feb.-02- 1/9 Specifications subject to change without notice

Gain flatness

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : [phone] - Fax : [phone]

On wafer typical measurement

± .0.5 ± 1

dB

CHA2190

20-30GHz Low Noise Amplifier

Electrical Characteristics

Tamb = +25°C, Vd = +4V (On wafer)

Symbol Parameter Min Typ Max Unit

Fop Operating freq uency range 20 30 Ghz

G Gain (1) 13 15 dB

∆G

Gain flatness (1)

NF Noise figure (1)

± 0.5 ± 1

2.2 3 dB

dB

VSWRin Input VSWR (1) 3.0:1

VSWRout Ouput VSW R (1) 3.0:1

IP3 3rd order intercept point 20 dBm

P1dB

Output power at 1dB gain compression (2)

11 dBm

Id Drain bias current (3) 50 70 mA

(1) These values are representative of wafer measurements without bonding wire at the RF ports.
(2)This value is a typical value when Vd=4V Vg1=Vg2=0V or not connected and can be increased

See chip biasing option page 8

(3) This current is the typical value for low noise and low current consumption biasing :
Vd=4V , Vg1=Vg2=0V or not connected.

Absolute Maximum Ratings (4)

Tamb = +25°C

Symbol Parameter Values Unit

Vd

Vg

Drain bias voltage (6)
Vg1 and Vg2 max

4.5
+1

V
V

Pin Maximum peak input power overdrive (5) 15 dBm

Top Operating tem per ature range -40 to +85 °C

Tstg Storage temperat ur e r ange -55 t o +125 °C

(4) Operation of this device above anyone of these paramaters may cause permanent damage.
(5) Duration < 1s.
(6) See chip biasing options page 8/9

Ref : DSCHA21902036 -05-Feb.-02- 2/9 Specifications subject to change without notic e

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: [phone] - Fax : [phone]

20-30GHz Low Noise Amplifier

CHA2190

Typical Results

Chip Typical Response ( On wafer Scattering parameters ) :

Tamb = +25°C Vd=4V Id=+50mA

Freq dBS11 PS11 dBS12 PS12 dBS21 PS21 dBS22 PS22

mod. pha. mod. pha. mod. pha. mod. pha.

GHz dBdeg.dBdeg.dBdeg.dBdeg.

2.00 -0.37 -74.86 -70.84 -53.91 -29.15 56.50 -2.03 -84.36

5.00 -0.53 -151.19 -61.97 -91.19 -54.49 149.52 -4.15 -155.38

8.00 -0.59 157.19 -63.84 -162.71 -21.34 -178.25 -5.97 161.51

9.00 -0.66 141.20 -64.59 167.32 -14.41 176.87 -6.38 149.74

10.00 -0.79 125.32 -62.91 152.65 -7.52 163.27 -7.07 136.72

11.00 -1.00 109.39 -62.00 165.51 -1.20 140.92 -8.02 124.05

12.00 -1.26 93.11 -61.10 65.75 4.21 111.98 -9.38 111.29

13.00 -1.33 73.86 -54.13 -36.78 8.62 79.00 -11.25 101.00

14.00 -1.39 52.92 -45.84 -88.69 12.13 43.65 -14.06 92.70

15.00 -1.79 26.36 -41.70 -126.55 14.89 7.60 -16.84 90.96

16.00 -3.06 -7.27 -38.40 -159.80 16.82 -31.20 -19.09 106.80

17.00 -5.59 -46.11 -36.52 168.18 17.53 -68.31 -17.25 106.98

18.00 -9.90 -88.64 -34.29 139.94 17.39 -102.75 -16.27 97.39

19.00 -13.09 -132.63 -34.84 112.28 16.98 -131.32 -17.29 75.43

20.00 -14.29 -179.39 -34.82 93.31 16.44 -156.45 -18.70 49.82

21.00 -14.48 143.23 -34.24 79.42 15.90 -179.20 -21.00 23.10

22.00 -14.71 118.23 -33.88 62.77 15.50 160.71 -20.27 -12.66

23.00 -14.92 100.80 -33.65 47.72 15.38 141.01 -20.10 -51.60

24.00 -15.42 87.80 -32.93 34.93 15.30 121.05 -17.74 -76.68

25.00 -16.38 78.89 -32.22 20.45 15.22 101.34 -16.09 -98.65

26.00 -16.55 77.15 -31.63 3.26 15.22 81.83 -14.40 -114.01

27.00 -16.33 77.12 -30.73 -11.52 15.24 61.81 -13.10 -131.22

28.00 -14.66 71.74 -30.72 -31.79 15.28 41.14 -12.13 -145.23

29.00 -13.19 61.95 -29.96 -45.41 15.27 20.38 -11.55 -159.84

30.00 -11.49 46.38 -29.74 -65.11 15.22 -1.31 -11.52 -175.03

31.00 -10.10 25.97 -29.29 -84.32 15.13 -23.85 -11.39 171.38

32.00 -8.49 1.99 -29.08 -104.88 14.92 -47.58 -12.30 155.28

33.00 -7.01 -24.08 -29.25 -127.09 14.46 -72.54 -13.60 135.95

34.00 -5.76 -50.88 -28.83 -147.90 13.73 -98.45 -16.45 111.53

35.00 -4.56 -78.91 -29.98 -177.63 12.61 -124.59 -22.00 75.08

36.00 -3.67 -103.63 -31.24 165.34 11.09 -149.58 -20.99 -22.73

37.00 -3.02 -125.99 -31.84 144.11 9.30 -173.89 -17.26 -69.71

38.00 -2.57 -146.23 -35.07 127.07 7.29 163.92 -12.77 -88.90

39.00 -2.18 -162.01 -35.66 98.71 5.36 143.17 -10.42 -108.31

40.00 -1.82 -178.56 -36.87 109.75 3.19 121.75 -8.88 -119.32

Ref : DSCHA21902036 -05-Feb.-02- 3/9 Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: [phone] - Fax : [phone]