United Monolithic Semiconductors CHA2063aMAF-23, CHA2063a99F-00 Datasheet

CHA2063a

Ref. : DSCHA20630096 -05-Apr-00 1/10 Specifications subject to change without notic e

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : [phone] - Fax : [phone]

7-13GHz Low No ise Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2063a is a two-stage wide band
monolithic low noise amplifier.

The circuit is manufactur ed with a
PM-HEMT process : 0.25µm gate length,
via holes through the substrate, air bridges
and electron beam gate lithogr aphy.

It is supplied in chip form or in an hermetic
leadless ceramic package.

Main Features

■ Broad band performance 7-13GHz

■ 2.0dB noise figure, 8-13GHz

■ 19dB gain

■ Low DC power consumption, 40mA

■ 18dBm 3rd order intercept point

■ Chip size : 1,52 x 1,27 x 0.1mm

Pin Out

1 - NC
2 - NC
3 - RF output
4 - NC
5 - Vdd
6 - RF input

Main Characteristics

Tamb = +25°C, package form

Symbol Parameter Min Typ Max Unit

NF

Noise figure, 7-8GHz
Noise figure, 8-13GHz

2.5

2.0

3.0

2.5

dB

GGain 1619 dB

∆G

Gain flatness

± 2.0

dB

ESD Protections : Electrostatic discharge sensitive device observe handling precautions !

CHA2063a

7-13GHz Low Noise Amplifier

Ref. : DSCHA20630096 -05-Apr-00 2/10 Specifications subject to change without notic e

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: [phone] - Fax : [phone]

Electrical Characteristics
Package form

Tamb = +25°C, Vd = +4V

Symbol Parameter

Test

Condi

tions

Min Typ Max Unit

Fop Operating freq uency range 7 13 Ghz

GGain 1619 dB

∆G

Gain flatness

± 2

dB

NF Noise figur e 7-8 Ghz

Noise figure 8-13 GHz

2.5

2.0

3.0

2.5

dB

VSWRin Input VSW R 2.0:1 2.5:1

VSWRout Ouput VSW R 2.0:1 2.5:1

P1dB

Output power at 1dB gain
compression F=10 GHz

8dBm

IP3 3rd order intercept point 18 dBm

Id Drain bias current 40 60 mA

Absolute Maximum Ratings

Tamb = +25°C

Symbol Parameter Values Unit

Vd Drain bias voltage (3) 5.0 V

Pin Maximum peak input power overdrive (2) +15 dBm

Top Operating temperature range -40 to +85 °C

Tstg Storage tem per at ur e range -55 to +125 °C

(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
(3)See chip biasing option page 9/10

7-13GHz Low Noise Amplifier

CHA2063a

Ref. : DSCHA20630096 -05-Apr-00 3/10 Specifications subject to change without notic e

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: [phone] - Fax : [phone]

Electrical Characteristics
Chip form

Tamb = +25°C, Vd = +4V

Symbol Parameter

Test

Condi

tions

Min Typ Max Unit

Fop Operating freq uency range (1) 7 12 Ghz

GGain 1719 dB

∆G

Gain flatness

± 2

dB

NF Noise figure 7-8 Ghz

Noise figure 8-12 GHz

2.5

2.0

3.0

2.5

dB

VSWRin Input VSW R (1) 2.0:1 3.0:1

VSWRout Ouput VSW R (1) 2.0:1 3.0:1

P1dB

Output power at 1dB gain
compression F=10 GHz

8dBm

IP3 3rd order intercept point 18 dBm

Id Drain bias current 40 80 mA

(1) These values are representative of on-wafer measurements that are made without
bonding wires at the RF ports. When the chip is connected with typical 0.3 nH input and
output bonding wires, the indicated parameter values are close to those of the CHA2063a
packaged product.