UNISONIC TECHNOLOGIES CO TIP122 Technical data

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!

UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR

NPN EPITAXIAL TRANSISTOR

DESCRIPTION

The UTC TIP122 is a NPN epitaxial transistor, designed
for use in general purpose amplifier low-speed switching
applications.

1

TO-126

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER SYMBOL RATINGS UNIT

Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current Ic 5 A
Collector Dissipation (Tc=25℃) PC 40 W
Storage Temperature Tstg -55 ~ +150 °C
Junction Temperature Tj 150 °C

100 V

CBO

100 V

CEO

5 V

EBO

ELECTRICAL

Collector-Emitter Breakdown Voltage BV
Collector Cut-Off Current I
Collector-Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation Voltage V
Collector-Emitter Saturation Voltage V
Base-Emitter Saturation Voltage V
DC Current Gain

CHARACTERISTICS(Ta=25°C, unless otherwise specified )

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

IC=100mA 100 V

CEO

VCB=100V 200 uA

CBO

VCE=50V 500 uA

CEO

VEB=5V 2 mA

EBO

IC=3A, IB=12mA 2 V

CE(SAT)1

IC=5A, IB=20mA 4 V

CE(SAT)2

VCE=3V, IC=3A 2.5 V

BE(ON)

h

FE

=500mA, VCE=3V

I

C

I

=3A, VCE=3V

C

1000
1000

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R204-016,A

1

UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR

0

0

0

SAFE OPERATING AREA

1000

COLLEC TORCURRE NT-mA

1000

100

10

1

1 10 100 1000

FORWARD VOLTAGE---VCE(V)

=

=

VBE(ON)

VS. IC

10000

VBE(ON)-(MV)

S O A

10

IC, COLLECTOR CURRENT-(A)

1

0.1

VCEO,COLLECTOR TO EMITTER VOLTAGE-(V)

=

1000

V BE

10 100

PT=1MS PT=10MS

VBE(SAT) VS. IC

1000

10

IC , COLLECTOR CURRENT

1000 100

1000

100

1000

I

C , COLLECTOR CURRENT

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R204-016,A

2