UNISONIC TECHNOLOGIES CO MMBT1616A Technical data

查询MMBT1616-G-AE3-R供应商

UNISONIC TECHNOLOGIES CO., LTD

MMBT1616/A

NPN EPITAXIAL SILICON
TRANSISTOR

 DESCRIPTION

* Audio frequency power amplifier
* Medium speed switching

NPN SILICON TRANSISTOR

3

1

2

SOT-23

*Pb-free plating product number:
MMBT1616L/MMBT16AL

 ORDERING INFORMATION

Order Number Pin Assignment

Normal Lead Free Plating

MMBT1616-x-AE3-R MMBT1616L-x-AE3-R SOT-23 E B C Tape Reel

MMBT1616A-x-AE3-R MMBT1616AL-x-AE3-R SOT-23 E B C Tape Reel

MMBT1616L-x-AE3-R

 MARKING

UTC MMBT1616 UTC MMBT1616A

16

Lead Plating

(1)Pac k i ng Type
(2)Pac k a ge Type
(3)Rank
(4)Lead Plating

16A

Package

(1) R: Tape Reel
(2) AE3: SOT-23
(3) x: refer to Classif ication of h
(4) L: Lead F r ee Plating, Blank: Pb/S n

Lead Plating

1 2 3

Packing

FE1

www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd

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QW-R206-036.B

MMBT1616/A

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATING

PARAMETER SYMBOL RATINGS UNIT

Collector-Base Voltage

Collector-Emitter Voltage
Emitter to Base Voltage V

Collector Current
Total Power Dissipation (Ta=25℃) PC 350 mW

Junction Temperature TJ +150 ℃
Storage Temperature T
Note (*) Pulse width≤10ms, Duty cycle<50%

1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

1616 60 V
1616A
1616 50 V
1616A

V

CBO

V

CEO

6 V

EBO

120 V

60

V

DC IC 1 A
Pulse* I

2 A

C

-55 ~ +150

STG

℃

 ELECTRICAL CHARACTERISTICS

(Ta=25℃)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation Voltage V
Base-Emitter Saturation Voltage V
Base Emitter On Voltage V

DC Current Gain

VCB=60V 100 nA

CBO

VEB= 6V 100 nA

EBO

IC=1A, IB=50mA 0.15 0.3 V

CE(SAT)

IC=1A, IB=50mA 0.9 1.2 V

BE(SAT)

VCE=2V, IC=50mA 600 640 700 mV

BE(ON)

h

VCE=2V, IC=100mA

FE1

VCE=2V, IC=1A 81

h

FE2

135 600
135 400

Current Gain Bandwidth Product fT VCE=2V, IC=100mA 100 160 MHz
Output Capacitance Cob VCB=10V, f=1MHz 19 pF
Turn On Time tON VCE=10V, IC=100mA 0.07 us
Storage Time tS IB1=-IB2=10mA 0.95 us
Fall Time tF V

 CLASSIFICATION OF h

FE1

=-2 ~ -3V 0.07 us

BE(OFF)

RANK Y G L

h

135-270 200-400 300-600

FE1

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

QW-R206-036.B

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