Collector-Emitter Voltage
Emitter to Base Voltage V
Collector Current
Total Power Dissipation (Ta=25℃) PC 350 mW
Junction Temperature TJ +150 ℃
Storage Temperature T
Note (*) Pulse width≤10ms, Duty cycle<50%
1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
1616 60 V
1616A
1616 50 V
1616A
V
CBO
V
CEO
6 V
EBO
120 V
60
V
DC IC 1 A
Pulse* I
2 A
C
-55 ~ +150
STG
℃
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation Voltage V
Base-Emitter Saturation Voltage V
Base Emitter On Voltage V
DC Current Gain
VCB=60V 100 nA
CBO
VEB= 6V 100 nA
EBO
IC=1A, IB=50mA 0.15 0.3 V
CE(SAT)
IC=1A, IB=50mA 0.9 1.2 V
BE(SAT)
VCE=2V, IC=50mA 600 640 700 mV
BE(ON)
h
VCE=2V, IC=100mA
FE1
VCE=2V, IC=1A 81
h
FE2
135 600
135 400
Current Gain Bandwidth Product fT VCE=2V, IC=100mA 100 160 MHz
Output Capacitance Cob VCB=10V, f=1MHz 19 pF
Turn On Time tON VCE=10V, IC=100mA 0.07 us
Storage Time tS IB1=-IB2=10mA 0.95 us
Fall Time tF V
CLASSIFICATION OF h
FE1
=-2 ~ -3V 0.07 us
BE(OFF)
RANK Y G L
h
135-270 200-400 300-600
FE1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R206-036.B
2 of 4
MMBT1616/A
TYPICAL CHARACTERISTICS
Collect or Output Capacit anc e
1000
500
300
(pF)
ob
100
50
30
IE=0
f=1.0MHz
1000
500
NPN SILICON TRANSISTOR
Current Gain-B andwidth Produc t
VCE=2V
300
100
(MHz)
T
50
30
10
Capacitance, C
5
3
110
3 530 50
Collect or-Base V oltage, V
10
5
(µs)
F
3
1
(µs), t
G
t
0.5
S
0.3
0.1
(µs), t
ON
0.05
0.03
Time, t
0.01
0.0010.01
Swit ching T ime
0.003
Collect or Current, IC (A)
VCC=10V
=10·IB1=-10·I
I
C
0.05
0.03
0.1
100300
(V)
CB
B2
tSt
G
t
F
t
ON
0.5
10
Product, f
5
Cu r r ent Gain-B andwidth
3
1
0.030.31
0.010.1
Collect or Cur r ent, IC (A)
5
103
100
St atic Charac teristic
IB=300µA
80
(mA)
C
60
40
IB=250µA
IB=200µA
IB=150µA
IB=100µA
20
Collect or Current, I
10.3
04
2
Collect or-E m itter V oltage , VCE(V)
6
IB=50µA
8
10
1. 0
0. 8
(mA)
C
St atic Charac teristic
IB=5.0mA
I
=4.5mA
B
m
0
.
4
=
B
I
A
IB=3.5mA
IB=3.0mA
IB=2.5mA
IB=2.0mA
0. 6
IB=1.5mA
0. 4
0. 3
IB=1.0mA
IB=0.5mA
Col lec tor Current, I
00.4
0.2
0.6
0.8
1.0
Collect or-E m itter V oltage , VCE(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
1000
500
300
FE
100
50
30
10
5
DC Cu r r ent Gain,h
3
1
0.010.05
0.030.31
Collect or Cur r ent, IC (A)
0.1
VCE=2V
0.5
103
5
DC Current Gain
QW-R206-036.B
3 of 4
MMBT1616/A
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Base- E m itter S aturation Voltage
Collect or-Emit ter Saturat ion V oltage
1000
IC=20·I
500
300
CE(SAT)
V
V
CE(sat)
BE( sat)
0.1
0.5
100
(V)
50
30
BE(SAT)
V
10
5
3
Satur ation Voltage, V
1
0.010.055
0.030.31
B
103
Collect or Cur r ent, IC (A)
Power Derating
0.8
(W)
D
0.6
10
5
(A)
3
C
1
0.5
0.3
0.1
0.05
Collector Current, I
0.03
0.01
110
Collect or-Emitter V oltage , V
Saf e Operat ing A rea
P
1
0
W
m
=1
2
s
0
D
C
3 530 50
m
0
s
m
s
D1616
D1616A
100300
(V)
CE
0.4
0.2
Power Derating, P
0 25 50 75 100 125150175200
Ambient Tem per ature, TA (℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specific ations of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malf unction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believ ed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R206-036.B
4 of 4
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