UNISONIC TECHNOLOGIES CO MCR101 Technical data
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UTC MCR101 SCR
SENSITIVE GATE SILICON
CONTROLLED RECTIFIERS
REVERSE BLOCKING
THYRISTORS
DESCRIPTION
PNPN devices designed for high volume,
line-powered consumer applications such as relay
and lamp drivers, small motor controls, gate drivers
for larger thyristors, and sensing and detection
circuits. Supplied in an inexpensive plastic TO-92
package which is readily adaptable for use in
automatic insertion equipment.
DESCRIPTION
*Sensitive Gate Allows Triggering by Micro controllers
and Other Logic circuits
*Blocking Voltage to 600V
*On-State Current Rating of 0.8A RMS at 80°C
*High Surge Current Capability – 10A
*Minimum and Maximum Values of IGT, VGT and IH
Specified for Ease of Design
*Immunity to dV/dt – 20V/µsec Minimum at 110°C
*Glass-Passivated Surface for Reliability and
Uniformity
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R
Lead Solder Temperature
(<1/16” from case, 10 secs max)
ABSOLUTE MAXIMUM RATINGS
Peak Repetitive Off-State Voltage(note)
(TJ=-40 to 110°C, Sine Wave, 50 to 60Hz; Gate Open)
MCR101-4
MCR101-6
MCR101-8
On-Sate RMS Current
(Tc=80°C) 180° Condition Angles
Peak Non-Repetitive Surge Current
(1/2 cycle, Sine Wave, 60Hz, TJ=25°C)
1
TO-92
1: GATE 2: ANODE 3:CATHODE:
PARAMETER SYMBOL MAX UNIT
75 °C/W
θJC
200 °C/W
θJA
TL 260 °C
PARAMETER SYMBOL MAX UNIT
VDRM,VRRM
200
400
600
IT(RMS) 0.8 A
ITSM 10 A
V
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-009,B
1
UTC MCR101 SCR
PARAMETER SYMBOL MAX UNIT
Circuit Fusing Considerations
(t=8.3 ms)
Forward Peak Gate Power
(TA=25°C, Pulse Width ≤1.0µs)
Forward Average Gate Power
(TA=25°C, t=8.3ms)
Peak Gate Current – Forward
(TA=25°C, Pulse Width≤1.0µs)
Peak Gate Voltage – Reverse
=25°C, Pulse Width≤1.0µs)
(T
A
Operating Junction Temperature Range @ Rated V
V
DRM
Storage Temperature Range Tstg -40 to +150 °C
Note: V
and V
DRM
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the
devices are exceeded.
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
RRM
RRM
and
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise stated)
PARAMETER TEST CONDITION SYMBOL MIN TYP MAX UNIT
OFF CHARACTERISTICS
Peak Forward or Reverse Blocking
Current Tc=25°C
Tc=125°C
ON CHARACTERISTICS
Peak Forward On-State Voltage
(Note1)
Gate Trigger Current (Continuous
dc)(note2)
Holding Current (note 3) Tc=25 °C
Tc=-40 °C
Latch Current Tc=25 °C
Tc=-40 °C
Gate Trigger Current
(continuous dc) (Note 2) Tc=25 °C
Tc=-40 °C
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State
Voltage
Critical Rate of Rise of On-State
Current
Notes: 1. Indicates Pulse Test Width≤1.0ms, duty cycle ≤1%
2. RGK=1000Ω included in measurement.
3. Does not include RGK in measurement.
VD=Rated V
ITM=1A Peak @ TA=25°C VTM 1.7 V
VAK=7Vdc, RL=100Ω, TC=25°C IGT 40 200 µA
VAK=7Vdc, initiating current=20mA IH 0.5 5
VD=Rated V
Waveform, RGK=1000Ω, TJ=110°C
diG/dt=1A/µsec, Igt=20mA
and V
DRM
VAK=7V, Ig=200µA IL 0.6 10
VAK=7Vdc, RL=100Ω V
IPK=20A; Pw=10µsec;
RRM
, Exponential
DRM
I2t 0.415 A2s
PGM 0.1 W
PG(AV) 0.1 W
IGM 1 A
V
GRM 5 V
T
-40 to +110 °C
J
; RGK=1kΩ I
, I
DRM
RRM
GT
dV/dt 20 35 V/µs
di/dt 50 A/µs
10
100
10
15
0.62 0.8
1.2
µA
µA
mA
mA
V
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R301-009,B
2
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