UNISONIC TECHNOLOGIES CO 2SB1386 Technical data

UNISONIC TECHNOLOGIES CO., LTD

2SB1386

LOW FREQUENCY PNP
TRANSISTOR

 FEATURES

* Excellent DC current gain characteristics
* Low V

V

CE(SAT)

(I

C/IB

 ORDERING INFORMATION

CE(SAT)

= -0.35V (Typ)

= -4A/-0.1A)

PNP SILICON TRANSISTOR

1

SOT-89

*Pb-free plating product number: 2SB1386L

Order Number Pin Assignment

Normal Lead Free Plating

2SB1386-x-AB3-F-R 2SB1386L-x-AB3-F-R SOT-89 B C E Tube

Package

1 2 3

Packing

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Copyright © 2005 Unisonic Technologies Co., Ltd

QW-R208-019,B

2SB1386 PNP SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Collector-Emitter Voltage V
Collector Current (DC) I
Collector Current (Pulse)(Note1) I
Collector Power Dissipation PC 0.5 W
Junction Temperature TJ 150 ℃
Storage Temperature T

Note 1. Single pulse, Pw=10ms

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Base Breakdown Voltage BV
Collector Emitter Breakdown Voltage BV
Emitter Base Breakdown Voltage BV
Collector-Emitter Saturation Voltage V
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain hFE VCE= -2V, IC= -0.5A 82 390
Transition Frequency fT VCE= -6V, IE= 50mA, f=30MHz 120 MHz
Output Capacitance Cob VCB= -20V, IE= 0A, f=1MHz 60 pF

IC= -50μA -30 V

CBO

IC= -1mA -20 V

CEO

IE= -50μA -6 V

EBO

IC/IB= -4A/-0.1A -1.0 V

CE(SAT)

VCB= -20V -0.5 μA

CBO

VEB= -5V -0.5 μA

EBO

-30 V

CBO

-20 V

CEO

-6 V

EBO

-5 A

C(DC)

-10 A

C(PULSE)

-55 ~ +150 ℃

STG

 CLASSIFICATION OF hFE

RANK P Q R

RANGE 82-180 120-270 180-390

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QW-R208-019,B