UNISONIC TECHNOLOGIES CO., LTD
2SB1386
LOW FREQUENCY PNP
TRANSISTOR
FEATURES
* Excellent DC current gain characteristics
* Low V
V
CE(SAT)
(I
C/IB
ORDERING INFORMATION
CE(SAT)
= -0.35V (Typ)
= -4A/-0.1A)
PNP SILICON TRANSISTOR
1
SOT-89
*Pb-free plating product number: 2SB1386L
Order Number Pin Assignment
Normal Lead Free Plating
2SB1386-x-AB3-F-R 2SB1386L-x-AB3-F-R SOT-89 B C E Tube
Package
1 2 3
Packing
www.unisonic.com.tw 1 of 5
Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R208-019,B
2SB1386 PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Collector-Emitter Voltage V
Collector Current (DC) I
Collector Current (Pulse)(Note1) I
Collector Power Dissipation PC 0.5 W
Junction Temperature TJ 150 ℃
Storage Temperature T
Note 1. Single pulse, Pw=10ms
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Base Breakdown Voltage BV
Collector Emitter Breakdown Voltage BV
Emitter Base Breakdown Voltage BV
Collector-Emitter Saturation Voltage V
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain hFE VCE= -2V, IC= -0.5A 82 390
Transition Frequency fT VCE= -6V, IE= 50mA, f=30MHz 120 MHz
Output Capacitance Cob VCB= -20V, IE= 0A, f=1MHz 60 pF
IC= -50μA -30 V
CBO
IC= -1mA -20 V
CEO
IE= -50μA -6 V
EBO
IC/IB= -4A/-0.1A -1.0 V
CE(SAT)
VCB= -20V -0.5 μA
CBO
VEB= -5V -0.5 μA
EBO
-30 V
CBO
-20 V
CEO
-6 V
EBO
-5 A
C(DC)
-10 A
C(PULSE)
-55 ~ +150 ℃
STG
CLASSIFICATION OF hFE
RANK P Q R
RANGE 82-180 120-270 180-390
UNISONIC TECHNOLOGIES CO., LTD 2 of 5
www.unisonic.com.tw
QW-R208-019,B
2SB1386 PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current vs. Base to Emitter
Voltage
-10
VCE = -2V
-5
-2
Ta=100℃
-1
-500m
-200m
-100m
-50m
Ta=25℃
Ta= -25℃
-20m
-10m
-5m
-2m
-1m
-0.2
0
-0.4 -0.6 -0.8 -1.4-1.2-1.0
Base to Emitter Voltage, V
DC Current Gain vs. Collector Current(1)
5k
Ta=25℃
2k
1k
500
200
100
VcE= -2V
50
20
10
5
-1m-2m
-5m
-0.01-0.02
-0.05 -0.1-0.2
-0.5
Collector Current, Ic(A)
BE(V)
VcE= -5V
VcE= -1V
-2
-1
-5 -10
Collector Current vs. Collector to Emitter
Voltage
-5
-4
-50mA
-45mA
-30mA
-25mA
Ta=25℃
-20mA
-15mA
-3
-10mA
-2
-35mA
-40mA
-1
0
0
-0.4 -0.8 -1.6 -2.0-1.2
IB =0mA
Collector to Emitter Voltage, V
DC Current Gain vs. Collector Current(2)
5k
VcE= -1V
2k
1k
500
Ta=100℃
200
100
Ta=25℃
Ta= -25℃
50
20
10
5
-1m-2m
-5m
-0.05 -0.1-0.2
-0.01-0.02
Collector Current, I
-0.5
-1
C(A)
-5mA
CE(V)
-2
-5 -10
DC Current Gain vs. Collector Current
5k
VcE= -2V
2k
1k
500
Ta=100℃
200
100
Ta= -25℃
Ta=25℃
50
20
10
5
-1m-2m
-5m
-0.01-0.02
-0.05 -0.1-0.2
Collector Current, Ic(A)
UNISONIC TECHNOLOGIES CO., LTD 3 of 5
www.unisonic.com.tw
-0.5
Collector-Emitter Saturation Voltage vs.
Collector Current (1)
-5
Ta=25℃
-2
-1
-0.5
-0.2
-0.1
Ic/IB=50/1
40/1
30/1
10/1
-0.05
-0.02
-2
-5 -10
-1
-0.01
-2m
-5m
-0.05 -0.1
-0.01-0.02
-0.2
-0.5-1-2 -5 -10
Collector Current, Ic(A)
QW-R208-019,B
2SB1386 PNP SILICON TRANSISTOR
TYPICAL CHARACTERICS(Cont.)
Collector-Emitter Saturation Voltage vs.
Collector Current (2)
-5
Ic/IB=10
-2
-1
Collector-Emitter Saturation Voltage vs.
Collector Current (3)
-5
Ic/IB=30
-2
-1
Ta=100℃
-0.5
-0.2
-0.1
Ta=100℃
-0.05
-0.02
-0.01
Collector Saturation Voltage, VCE(SAT) (V)
-2m
-5m
-0.01-0.02
-0.05 -0.1
-0.2
Collector Current, Ic(A)
Collector-Emitter Saturation Voltage vs.
Collector Current (IV)
-5
Ic/IB=40
-2
-1
-0.5
-0.2
-0.1
Ta=100℃
-0.05
-0.02
-0.01
Collector Saturation Voltage, VCE(SAT) ( V)
-2m
-5m
-0.01-0.02
-0.05 -0.1
-0.2
Collector Current, Ic(A)
Ta=25℃
Ta= -25℃
-0.5-1-2 -5 -10
Ta= -25℃
Ta=25℃
-0.5-1-2 -5 -10
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
Collector Saturation Voltage, VCE(SAT) ( V)
-2m
-5m
-0.01-0.02
-0.05 -0.1
-0.2
Collector Current, Ic(A)
Collector-Emitter Saturation Voltage vs.
Collector Current (V)
-5
Ic/IB=50
-2
-1
Ta=100℃
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
Collector Saturation Voltage, VCE(SAT)(V)
-2m
-5m
-0.01-0.02
-0.05 -0.1
-0.2
Collector Current, Ic(A)
Ta=25℃
Ta= -25℃
-0.5-1-2 -5 -10
Ta= -25℃
Ta=25℃
-0.5-1-2 -5 -10
Transetion Frequency vs. Emitter Current
1000
Ta=25℃
500
200
100
50
20
10
5
2
Transetion Frequency, fT (MHz)
1
12510 20
50 100 500
Emitter Current, I
UNISONIC TECHNOLOGIES CO., LTD 4 of 5
www.unisonic.com.tw
VcE= -6V
200 1000
E(mA)
1000
200
100
Collector Output Capacitance, Cob (pF)
Collector Output Capacitance vs.
Collector-Base Voltage
Ta=25℃
f =1MHz
500
E=0A
I
50
20
10
-0.2
-0.1
-0.5
Collector to Base Voltage, V
-5-1 -2 -20-10
CB(V)
-50
QW-R208-019,B
2SB1386 PNP SILICON TRANSISTOR
TYPICAL CHARACTERICS(Cont.)
Emitter Input Capacitance vs. Emitter-
1000
500
200
100
50
Ta=25℃
20
Emitter Input Capacitance, Cib (pF)
f=1MHz
-0.1
Emitter To Base Voltage, V
Base Voltage
-0.2 -0.5 -2 -5-1
Ic=0A
EB(V)
-10
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD 5 of 5
www.unisonic.com.tw
QW-R208-019,B
Loading...