查询2SA1020-O-AB3-B供应商
UNISONIC TECHNOLOGIES CO., LTD
2SA1020
PNP SILICON TRANSISTOR
SILICON PNP EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC 2SA1020 is designed for power amplifier and power
switching applications.
FEATURES
*Low collector saturation voltage:
V
=-0.5V(max.) (IC=-1A)
CE(SAT)
*High speed switching time: t
*Complement to UTC 2SC2655
ORDERING INFORMATION
Order Number Pin Assignment
Normal Lead Free Plating
2SA1020-x-AB3-R 2SA1020L-x-AB3-R SOT-89 B C E Tape Reel
2SA1020-x-T9N-B 2SA1020L-x-T9N-B TO-92NL E C B Tape Box
2SA1020-x-T9N-K 2SA1020L-x-T9N-K TO-92NL E C B Bulk
=1.0µs(Typ.)
STG
Package
*Pb-free plating product number:2SA1020L
1 2 3
1
1
Packing
SOT-89
TO-92NL
2SA1020L-x-AB3-R
(1 ) P ac king Type
(2 ) P ac kage Type
(3)Rank
(4)Lead Plating
(1) B: Tape Box, K: Bulk, R: Tap e Reel
(2) AB3: SOT-89, T9N: TO-92NL
(3) x: refer to Classification of h
(4) L : Lead Free P lating, B l ank : P b/S n
FE1
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R211-007,B
2SA1020 PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
-50 V
CBO
-50 V
CEO
-5 V
EBO
Collector Current Ic -2 A
Collector Power Dissipation
TO-92NL 900 mW
SOT-89
PC
500 mW
Junction Temperature TJ 150 °C
Storage Temperature T
-55 ~ +150 °C
STG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector to Emitter Breakdown Voltage BV
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
Collector to Emitter Saturation Voltage V
Base to Emitter Saturation Voltage V
Ic=-10mA, IB=0 -50 V
CEO
VCB=-50V, IE=0 -1.0 µA
CBO
VEB=-5V, IC=0 -1.0 µA
EBO
h
FE1
h
FE2
CE(SAT)
BE(SAT)
=-2V, IC=-0.5A
V
CE
V
=-2V, IC=-1.5A
CE
70
40
240
Ic=-1A, IB=-0.05A -0.5 V
Ic=-1A, IB=-0.05A -1.2 V
Transition Frequency fT VCE=-2V, Ic=-0.5A 100 MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz 40 pF
Turn-on Time tON 0.1 µs
Switching Time
Storage Time t
Fall Time tF
1.0 µs
STG
0.1 µs
CLASSIFICATION OF h
FE1
RANK O Y
RANGE 70 - 140 120 - 240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R211-007,B
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2SA1020 PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R211-007,B
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2SA1020 PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
TO-92NL
SOT-89
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malf unction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believ ed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R211-007,B
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