UNISONIC TECHNOLOGIES 2N60 DATA SHEET

UNISONIC TECHNOLOGIES CO., LTD

2N60

2 Amps, 600 Volts
N-CHANNEL MOSFET

 DESCRIPTION

The UTC 2N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.

 FEATURES

* R
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (Crss = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

= 3.8Ω@VGS = 10V.

DS(ON)

Power MOSFET

1

1

1

1

*Pb-free plating product number: 2N60L

TO- 251

TO-252

TO-220

TO-220F

 SYMBOL

2.Dra in

1.Gate

3.So urce

 ORDERING INFORMATION

Order Number Pin Assignment

Normal Lead Free Plating
2N60-TA3-T 2N60L-TA3-T TO-220 G D S Tube
2N60-TF3-T 2N60L-TF3-T TO-220F G D S Tube

2N60-TM3-T 2N60L-TM3-T TO-251 G D S Tube
2N60-TN3-R 2N60L-TN3-R TO-252 G D S Tape Reel
2N60-TN3-T 2N60L-TN3-T TO-252 G D S Tube

Note: Pin Assignment: G: Gate D: Drain S: Source

2N60L-TA3-T

(1)Packing Type

(2)Package Type

(3)Lead Plating

Package

(1) T: Tube, R: Tape Reel

(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
TN 3: TO-252

(3) L: Lead Free Plating, Blank: Pb/Sn

1 2 3

Packing

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Copyright © 2005 Unisonic Technologies Co., Ltd

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QW-R502-053,E

2N60

Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (

T

= 25℃, unless otherwise specified)

C

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
Gate-Source Voltage V

600 V

DSS

±30 V

GSS

Avalanche Current (Note 2) IAR 2.0 A

Drain Current Continuous

TC = 25°C 2.0 A

= 100°C

T

C

I

D

1.26 A

Drain Current Pulsed (Note 2) IDP 8.0 A

Avalanche Energy

Repetitive(Note 2) EAR 4.5 mJ
Single Pulse(Note 3) E

140 mJ

AS

Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns

Total Power Dissipation

TC = 25°C

Derate above 25°C
Junction Temperature T
Storage Temperature T

PD

+150 ℃

J

-55 ~ +150 ℃

STG

45 W

0.36 W/℃

Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L=64mH, I

4. I

≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BV

SD

=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

 THERMAL DATA

PARAMETER PACKAGE SYMBOL RATINGS UNIT

TO-251 112

Thermal Resistance Junction-Ambient

Thermal Resistance Junction-Case

TO-252 112
TO-220 54

TO-220F

TO-251 12
TO-252 12
TO-220 4

TO-220F

θJA

θJc

54

4

℃/W

 ELECTRICAL CHARACTERISTICS

(T

=25℃, unless Otherwise specified.)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Off Characteristics

Drain-Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Gate-Body Leakage Current

Breakdown Voltage Temperature

Forward VGS = 30V, VDS = 0V 100 nA
Reverse

△BV

Coefficient

DSSVGS

DSS

I

GSS

DSS

T△

J

= 0V, ID = 250µA 600 V

VDS = 600V, VGS = 0V 10 µA

= 480V, TC = 125°C 100 µA

V

DS

= -30V, VDS = 0V -100 nA

V

GS

/

I

= 250 µA 0.4 V/℃

D

On Characteristics

Gate Threshold Voltage V
Static Drain-Source On-Resistance R

GS(TH)VDS

DS(ON)VGS

= VGS, ID = 250µA 2.0 4.0 V
= 10V, ID =1A 3.8 5 Ω

Forward Transconductance gFS VDS = 50V, ID = 1A (Note 1) 2.25 S

Dynamic Characteristics

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

270 350 pF

ISS

V

=25V, V

40 50 pF

OSS

RSS

DS

=0V, f =1MHz

GS

5 7 pF

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

QW-R502-053,E

2 of 8

2N60

Power MOSFET

 ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Switching Characteristics

Turn-On Delay Time t
Rise Time tR 25 60 ns
Turn-Off Delay Time t
Fall Time tF
Total Gate Charge QG 9.0 11 nC
Gate-Source Charge QGS 1.6 nC
Gate-Drain Charge QGD

Drain-Source Diode Characteristics

Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A 1.4 V
Continuous Drain-Source Current ISD 2.0 A
Pulsed Drain-Source Current ISM 8.0 A
Reverse Recovery Time tRR 180 ns
Reverse Recovery Charge QRR
Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2%

2. Essentially Independent of Operating Temperature

10 30 ns

D (ON)

=300V, ID =2.4A, RG=25Ω

V

DD

(Note 1,2)

20 50 ns

D(OFF)

25 60 ns

V

=480V, VGS=10V, ID=2.4A

DS

(Note 1, 2)

VGS = 0 V, ISD = 2.4A,
di/dt = 100 A/µs (Note1)

4.3 nC

0.72 µC

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QW-R502-053,E