UNISONIC TECHNOLOGIES 13N50 Datasheet

UNISONIC TECHNOLOGIES CO., LTD

13N50

Preliminary

500V N-CHANNEL MOSFET

 DESCRIPTION

The UTC 13N50 is an N-Channel enhancement mode power MOSFET.

The device adopts planar stripe and uses DMOS technology to minimize
and provide lower on-state resistance and faster switching speed. It can
also withstand high energy pulse under the avalanche and commutation
mode conditions.

The UTC 13N50 is ideally suitable for high efficiency switch mode

power supply, power factor correction, electronic lamp ballast based on half

bridge topology.

 FEATURES

* R
* Ultra low gate charge (typical 43 nC )
* Low reverse transfer Capacitance ( C
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness

=0.48 @VGS = 10 V

DS(ON)

= typical 20pF )

RSS

Power MOSFET

1

1

1

TO-220

TO-220F

TO-220F1

 SYMBOL

 ORDERING INFORMATION

Ordering Number Pin Assignment

Lead Free Halogen Free
13N50L-TA3-T 13N50G-TA3-T TO-220 G D S Tube
13N50L-TF3-T 13N50G-TF3-T TO-220F G D S Tube

13N50L- TF1-T 13N50G-TF1-T TO-220F1 G D S Tube

Package

1 2 3

Packing

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13N50 Preliminary

Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (T

= 25°C, unless otherwise specified)

C

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
Gate-Source Voltage V

500 V

DSS

±30 V

GSS

Continuous Drain Current ID 13 A
Pulsed Drain Current (Note 2) IDM 52 A
Avalanche Current (Note 2) IAR 13 A
Single Pulsed Avalanche Energy (Note 3) EAS 810 mJ
Repetitive Avalanche Energy (Note 2) EAR 17 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns

Power Dissipation (TC=25°C)

TO-220 168 W
TO-220F

PD

48 W
Junction Temperature TJ +150 °C
Storage Temperature T

-55~+150 °C

STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 9.3mA, I

4. I

≤13.A, di/dt ≤200A/s, VDD≤ BV

SD

= 13A, VDD = 50V, RG= 25 ,Starting TJ = 25°C

AS

, Starting TJ= 25°C

DSS

 THERMAL DATA

PARAMETER SYMBOL RATINGS UNIT

Junction to Ambient

Junction to Case

TO-220 62.5 °C/W
TO-220F
TO-220 0.74 °C/W
TO-220F

JA

JC

62.5 °C/W

2.58 °C/W

 ELECTRICAL CHARACTERISTICS (T

=25°C, unless otherwise specified)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage BV
Drain-Source Leakage Current I

Gate-Source Leakage Current I

Breakdown Voltage Temperature
Coefficient

△BV

VGS = 0V, ID = 250A 500 V

DSS

VDS = 500V, VGS = 0V 1 A

DSS

VGS = 30V, VDS = 0V 100 nA

GSS

DSS

VGS = -30V, VDS = 0V -100 nA
ID = 250A

/△T

J

Referenced to 25°C

0.5 V/°C

ON CHARACTERISTICS

Gate Threshold Voltage V
Static Drain-Source On-State Resistance R

VDS = VGS, ID = 250A 2.0 4.0 V

GS(TH)

VGS = 10V, ID = 6.5A 0.33 0.43 

DS(ON)

Forward Transconductance gFS VDS=50V, ID=6.25A (Note 1) 10 S

DYNAMIC CHARACTERISTICS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

1800 2300 pF

ISS

VDS=25V, VGS=0V, f=1.0MHz

245 320 pF

OSS

RSS

25 35 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time t
Turn-On Rise Time tR 140 290 nS
Turn-Off Delay Time t
Turn-Off Fall Time tF
Total Gate Charge QG 45 60 nC
Gate-Source Charge QGS 11 nC
Gate-Drain Charge QGD

40 90 nS

D(ON)

=250V, ID =13A

V

DD

R

100 210 nS

D(OFF)

=25 (Note 1,2)

G

85 180 nS

V

=400V, ID=13A, VGS=10 V

DS

(Note 1, 2)

22 nC

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