Uniks P0903BEA Schematics

P0903BEA

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY

V

(BR)DSS

PDFN 3x3P

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

R

DS(ON)

TC = 100 °C

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

Gate-Source Voltage

9mΩ @V

GS

= 10V

48A

SYMBOL

V

DS

Pulsed Drain Current

1

45

30

Operating Junction & Storage Temperature Range

I

D

30V

W

Avalanche Current

I

AS

TC = 25 °C

E

AS

L = 0.1mH

TJ, T

STG

TC = 25 °C

TC = 100 °C30V

GS

1.5

13

33

I

DM

48

30102.3

±20

I

D

P

D

13

TA = 70 °C

Avalanche Energy

LIMITS

°C

-55 to 150

mJ

UNITS

130

V

A

Continuous Drain Current

2

Power Dissipation
TA = 25 °C

TA = 70 °C

TA = 25 °C

Ver 1.0 1 2012/9/4

P0903BEA

N-Channel Enhancement Mode MOSFET

THERMAL RESISTANCE RATINGS

UNITS

1

Pulse width limited by maximum junction temperature.

2

Package limitation current is 30A.

3

The value of R<JA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper , in a still air

environment with TA=25°C。The value in any given application depends on the user's specific board design

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN TYP MAX

30

1 1.7 3

±100 nA

1

10

130

A

11.2 13

7 9

45 S

1590

193

159

31175.581.7 Ω

91432

16

VDS = 5V, VGS = 10V

Drain-Source On-State
Resistance

1

R

DS(ON)

VGS = 10V, ID = 13A

t

f

Fall Time

2

Reverse Transfer Capacitance

QgdQ

gs

nS

VDS = 0.5V

(BR)DSS

,

ID @ 13A, VGS = 10V, R

GEN

= 3Ω

Gate Resistance

t

d(on)trtd(off)RgVGS

= 0V, VDS = 0V, f = 1MHz

THERMAL RESISTANCE

SYMBOL

TYPICAL

Input Capacitance

Output Capacitance

Gate-Drain Charge

2

Gate-Source Charge

2

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

MAXIMUM

UNIT

R

qJA

VGS = 4.5V, ID = 10A

VDS = 5V, ID = 13A

V

GS(th)

Forward Transconductance

1

VGS = 0V, ID = 250mA

V

(BR)DSS

Zero Gate Voltage Drain Current
Gate-Body Leakage

gfsI

D(ON)

nC

VGS = 0V, VDS = 15V, f = 1MHz

pF

C

issCoss

Q

g(VGS=10V)

VDS = 0.5V

(BR)DSS

, ID = 13A,

VGS=10V

C

rss

Gate Threshold Voltage

DYNAMIC

V

I

GSS

I

DSS

mA

VDS = 24V, VGS = 0V

mΩ

On-State Drain Current

1

Drain-Source Breakdown Voltage

VDS = 20V, VGS = 0V , TJ = 55 °C

VDS = VGS, ID = 250mA

VDS = 0V, VGS = ±20V

STATIC

55

R

qJC

3.7

Total Gate Charge

2

Q

g(VGS=4.5V

Turn-On Delay Time

2

Rise Time

2

Turn-Off Delay Time

2

Junction-to-Ambient

3

Junction-to-Case

°C / W

Ver 1.0 2 2012/9/4

P0903BEA

N-Channel Enhancement Mode MOSFET

48 A

1.3 V

11.7 nS

2 nC

1

Pulse test : Pulse Width  300 msec, Duty Cycle  2％.

2

Independent of operating temperature.

3

Package limitation current is 30A.

Forward Voltage

1

V

SD

Reverse Recovery Time

t

rr

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

IF = 13A, VGS = 0V

IF = 13A, dlF/dt = 100A / mS

Reverse Recovery Charge

Q

rr

Continuous Current

3

I

S

Ver 1.0 3 2012/9/4