Unikc P2003BEA Schematic [ru]
P2003BEA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V
(BR)DSS
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
THERMAL RESISTANCE RATINGS
UNITS
1
Pulse width limited by maximum junction temperature.
V
Steady-State
Steady-State
Junction-to-Ambient
Junction-to-Case
°C / W
202560mJ8W2
Operating Junction & Storage Temperature Range
SYMBOL
°C
-55 to 150
60
UNITS
16
TYPICAL
V
DS
30
SYMBOL
I
DM
V
GS
LIMITS
A
TC = 25 °C
E
AS
15
17
R
qJC
MAXIMUM
6
THERMAL RESISTANCE
Avalanche Energy
L =0.1mH
I
D
Tc = 25 °C
30V
Tc = 100 °C
PARAMETERS/TEST CONDITIONS
R
DS(ON)
Drain-Source Voltage
20mΩ @V
GS
= 10V
25A
Gate-Source Voltage
±20
8
TA = 70 °C
1.3
TA= 70 °C
6
TA = 25 °C
TC = 100 °C
TJ, T
stg
R
qJA
TA = 25 °C
I
D
Pulsed Drain Current
1
Continuous Drain Current
Power Dissipation
P
D
Avalanche Current
I
AS
REV 1.2 1 2014/8/6
P2003BEA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
MIN TYP MAX
30
1 1.8 2.5
±100 nA
1
10
60 A
28.2 31
17.6 20
16 S
625
130732.6 Ω
12.1
6.3
2.1
3.112122013
25 A
1 V
30 nS
16 nC
1
Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
2
Independent of operating temperature.
On-State Drain Current
1
I
D(ON)VDS
= 5V, VGS = 10V
Zero Gate Voltage Drain Current
I
GSS
IF = 8A, dl
F
/dt = 100A / μS
UNITS
C
oss
Drain-Source Breakdown Voltage
V
Forward Transconductance
1
V
(BR)DSS
TEST CONDITIONS
STATIC
VGS = 0V, ID = 250mA
C
issVDS
= 10V, ID = 8A
VDS = 0V, VGS = ±20V
g
fs
R
DS(ON)
VGS = 4.5V, ID = 6A
nC
VGS = 0V, VDS = 0V, f = 1MHz
Q
gs
mA
DYNAMIC
mΩ
V
DS
= 24V, V
GS
= 0V
Q
gd
pF
I
DSS
Q
rr
Reverse Recovery Charge
Continuous Current
Forward Voltage
1
Reverse Recovery Time
ISVSDtrrIF = 8A, VGS = 0V
nS
VDD= 15V,
ID @ 8A, V
GEN
= 10V, R
G
= 3Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
t
d(on)trtd(off)tf
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
Gate Threshold Voltage
Drain-Source On-State
Resistance
1
R
g
VDS = VGS, ID = 250mA
Gate-Body Leakage
V
GS(th)
LIMITS
VDS = 0.5V
(BR)DSS
, ID = 8A
Gate-Drain Charge
2
Gate-Source Charge
2
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
2
Qg(VGS=10V)
Qg(VGS=4.5V)
C
rss
Input Capacitance
V
GS
= 0V, VDS = 15V, f = 1MHz
PARAMETER
Output Capacitance
VGS = 10V , ID = 8A
VDS = 20V, VGS = 0V, TJ = 55 °C
SYMBOL
REV 1.2 2 2014/8/6
Loading...