UBIQ QM3024M3 Datasheet
S
General Description
The QM3024M3 is the highest performance
trench N-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
The QM3024M3 meet the RoHS and Green
Product requirement , 100% EAS guaranteed
with full function reliability approved.
Features
QM3024M3
N-Ch 30V Fast Switching MOSFETs
Product Summary
BVDSS RDSON ID
30V
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
9 mΩ
46A
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage 30 V
VGS
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM Pulsed Drain Current2 92 A
EAS Single Pulse Avalanche Energy3 130 mJ
IAS Avalanche Current 34 A
PD@TC=25℃
PD@TA=25℃
T
Storage Temperature Range -55 to 150
STG
TJ Operating Junction Temperature Range -55 to 150
Continuous Drain Current, VGS @ 10V1 46 A
Continuous Drain Current, VGS @ 10V1 29 A
Continuous Drain Current, VGS @ 10V1 17.3 11 A
Continuous Drain Current, VGS @ 10V1 13.8 8.7 A
Gate-Source Voltage
Total Power Dissipation4 29 W
Total Power Dissipation4 4.2 1.67 W
PRPAK3X3 Pin Configuration
D
G
S
S
Rating
10s Steady State
±20
Units
V
℃
℃
Symbol Parameter Typ. Max. Unit
R
Thermal Resistance Junction-Ambient
θJA
R
θJA
R
Thermal Resistance Junction-Case
θJC
Thermal Resistance Junction-Ambient 1 (t ≤10s)
1
1
--- 75
--- 30
--- 4.32
Rev A.01 D060312
℃/W
℃/W
℃/W
1
QM3024M3
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol Parameter Conditions Min. Typ. Max. Unit
BV
Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 35 --- V
DSS
△BV
Guaranteed Avalanche Characteristics
/△TJ
BVDSS Temperature Coefficient
Static Drain-Source On-Resistance2
Gate Threshold Voltage
V
Temperature Coefficient --- -3.5 ---
GS(th)
Drain-Source Leakage Current
Gate-Source Leakage Current
R
V
△V
DSS
DS(ON)
GS(th)
GS(th)
I
DSS
I
GSS
Reference to 25℃ , ID=1mA
VGS=10V , ID=30A --- 7.2 9
VGS=4.5V , ID=15A --- 10.5 13.5
VGS=VDS , ID =250uA
=24V , VGS=0V , TJ=25℃
V
DS
VDS=24V , VGS=0V , TJ=55℃
V
=±20V , VDS=0V
GS
--- 0.024 ---
1.2 1.5 2.5 V
--- --- 1
--- --- 5
--- ---
±100
gfs Forward Transconductance VDS=5V , ID=30A --- 38.2 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.45 2.4
Qg Total Gate Charge (4.5V)
=15V , VGS=4.5V , ID=15A
Qgs Gate-Source Charge --- 4.2 5.9
V
DS
--- 10.6 14.8
Qgd Gate-Drain Charge --- 4.0 5.6
T
Turn-On Delay Time
d(on)
=15V , VGS=10V , RG=3.3Ω
Tr Rise Time --- 70.6 127
T
Turn-Off Delay Time --- 22.4 45
d(off)
V
DD
I
=15A
D
--- 6.4 12.8
Tf Fall Time --- 8.0 16
C
Input Capacitance
iss
=15V , VGS=0V , f=1MHz
C
Output Capacitance --- 194 272
oss
C
Reverse Transfer Capacitance --- 77 108
rss
V
DS
--- 1127 1578
Symbol Parameter Conditions Min. Typ. Max. Unit
V/℃
mΩ
mV/℃
uA
nA
Ω
nC
ns
pF
EAS Single Pulse Avalanche Energy5
V
=25V , L=0.1mH , IAS=20A
DD
45 --- --- mJ
Diode Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
IS Continuous Source Current
ISM Pulsed Source Current
VSD Diode Forward Voltage2
1,6
2,6
--- --- 92 A
=0V , Force Current
V
G=VD
=0V , IS=1A , TJ=25℃
V
GS
trr Reverse Recovery Time
F=30A , dI/dt=100A/µs , T
Qrr Reverse Recovery Charge --- 3.7 --- nC
Note :
1.The data tested by surface mounted on a 1 inch
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is V
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
and IDM , in real applications , should be limited by total power dissipation.
D
2
FR-4 board with 2OZ copper.
I
=25V,VGS=10V,L=0.1mH,IAS=34A
DD
=25℃
J
2
--- --- 46 A
--- --- 1 V
--- 12 --- nS
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