Ubiq QM3018M6, QM3018N6 Schematic [ru]

General Description

Product Summery

The QM3018M6/N6 is the highest performance

trench N-ch MOSFETs with extreme high cell

density , which provide excellent RDSON and

gate charge for most of the synchronous buck

converter applications .

The QM3018M6/N6 meet the RoHS and Green

Product requirement , 100% EAS guaranteed

with full function reliability approved.

BVDSS RDSON ID

Applications

z High Frequency Point-of-Load Synchronous

Buck Converter for MB/NB/UMPC/VGA

z Networking DC-DC Power System

z Load Switch

Features

z Advanced high cell density Trench technology

d

z Super Low Gate Charge

z Excellent CdV/dt effect decline

z 100% EAS Guaranteed

z Green Device Available

Pin Configuration

D

Absolute Maximum Ratings

Symbol Parameter Rating Units

VDS Drain-Source Voltage 30 V

VGS

ID@TC=25℃

ID@TC=100℃

ID@TA=25℃

ID@TA=70℃

IDM Pulsed Drain Current2 325 A

EAS Single Pulse Avalanche Energy3 378 mJ

IAS Avalanche Current 70.2 A

PD@TC=25℃

PD@TA=25℃

T

Storage Temperature Range -55 to 150

STG

TJ Operating Junction Temperature Range -55 to 150

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V

Gate-Source Voltage

Total Power Dissipation4 119 W

Total Power Dissipation4 2 W

Thermal Data

Symbol Parameter Typ. Max. Unit

R

Thermal Resistance Junction-Ambient 1 --- 62

θJA

R

Thermal Resistance Junction-Case1 --- 1.05

θJC

QM3018M6/N6

N-Ch 30V Fast Switching MOSFETs

30V 3mΩ 163A

D

G

S

S

S

QM3018M6in QM3018N6in

±20

1,7

163 A

1,7

100 A

1,7

21 A

1,7

17 A

S

S

S

G

V

℃

℃

℃/W

℃/W

1

Rev A.01 D051310

QM3018M6/N6

N-Ch 30V Fast Switching MOSFETs

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit

BV

Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V

DSS

△BV

/△TJ

BV

DSS

R

Static Drain-Source On-Resistance2

DS(ON)

V

Gate Threshold Voltage 1 1.5 2.5 V

GS(th)

△V

GS(th)

I

Drain-Source Leakage Current

DSS

I

Gate-Source Leakage Current

GSS

Temperature Coefficient

DSS

V

Temperature Coefficient

GS(th)

Reference to 25℃ , I

VGS=10V , ID=30A --- 2.4 3

VGS=10V , ID=15A 3.2 4

V

GS=VDS

, ID =250uA

VDS=24V , VGS=0V , TJ=25℃

=24V , VGS=0V , TJ=55℃

V

DS

V

=±20V , VDS=0V

GS

=1mA

D

--- 0.022 ---

--- -6.1 ---

--- --- 2

--- --- 10

--- ---

±100

gfs Forward Transconductance VDS=5V , ID=30A --- 60 --- S

Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 0.9 1.8

Qg Total Gate Charge (4.5V) --- 56.9 ---

V

Qgs Gate-Source Charge --- 13.8 ---

Qgd Gate-Drain Charge

T

Turn-On Delay Time --- 20.1 ---

d(on)

Tr Rise Time --- 6.3 ---

T

Turn-Off Delay Time --- 124.6 ---

d(off)

Tf Fall Time

C

Input Capacitance --- 5935 ---

iss

C

Output Capacitance --- 725 ---

oss

C

Reverse Transfer Capacitance

rss

=15V , VGS=10V , ID=15A

DS

VDD=15V , VGS=10V , RG=3.3Ω,

=1A

I

D

V

=15V , VGS=0V , f=1MHz

DS

--- 23.5 ---

--- 15.8 ---

--- 538 ---

V/℃

mΩ

mV/℃

uA

nA

Ω

nC

ns

pF

Guaranteed Avalanche Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

EAS Single Pulse Avalanche Energy5

VDD=25V , L=0.1mH , IAS=30A

69 --- --- mJ

Diode Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

IS Continuous Source Current

ISM Pulsed Source Current

VSD Diode Forward Voltage2

Note :

1.The data tested by surface mounted on a 1 inch

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is V

4.The power dissipation is limited by 150℃ junction temperature

5.The Min. value is 100% EAS tested guarantee.

6.The data is theoretically the same as I

7.Package limitation current is 85A.

and IDM , in real applications , should be limited by total power dissipation.

D

2

1,6

--- --- 163 A

2,6

2

FR-4 board with 2OZ copper.

VG=VD=0V , Force Current

=0V , IS=A , TJ=25℃

V

GS

=25V,VGS=10V,L=0.1mH,IAS=70.2A

DD

--- --- 325 A

--- --- 1.2 V