Ubiq QM3014M6, QM3014N6 Schematic [ru]
QM3014M6/N6
N-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The QM3014M6/N6 is the highest performance
trench N-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
The QM3014M6/N6 meet the RoHS and Green
Product requirement , 100% EAS guaranteed
with full function reliability approved.
BVDSS RDSON ID
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
z Advanced high cell density Trench technology
d
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Pin Configuration
D
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
IDM Pulsed Drain Current2 100 A
EAS Single Pulse Avalanche Energy3 53 mJ
IAS Avalanche Current 22 A
PD@TC=25℃
T
Storage Temperature Range -55 to 150
STG
TJ Operating Junction Temperature Range -55 to 150
Continuous Drain Current, VGS @ 10V1 50 A
Continuous Drain Current, VGS @ 10V1 38 A
Continuous Drain Current, VGS @ 10V1 11 A
Gate-Source Voltage
Total Power Dissipation4 41.7 W
Thermal Data
Symbol Parameter Typ. Max. Unit
R
Thermal Resistance Junction-Ambient 1 --- 62
θJA
R
Thermal Resistance Junction-Case1 --- 3
θJC
1
30V 12mΩ 50A
D
G
S
S
S
QM3014M6in QM3014N6in
±20
S
S
S
G
V
℃
℃
℃/W
℃/W
QM3014M6/N6
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol Parameter Conditions Min. Typ. Max. Unit
BV
Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
DSS
△BV
/△TJ
BVDSS Temperature Coefficient
Static Drain-Source On-Resistance2
Gate Threshold Voltage 1.0 1.5 2.5 V
V
Temperature Coefficient
GS(th)
Drain-Source Leakage Current
Gate-Source Leakage Current
R
V
△V
DSS
DS(ON)
GS(th)
GS(th)
I
DSS
I
GSS
Reference to 25℃ , ID=1mA
VGS=10V , ID=15A --- 10 12
VGS=4.5V , ID=10A --- 15 18
VGS=VDS , ID =250uA
VDS=24V , VGS=0V , TJ=25℃
=24V , VGS=0V , TJ=55℃
V
DS
V
=±20V , VDS=0V
GS
--- 0.0232 ---
--- -5.08 ---
--- --- 1
--- --- 5
--- ---
±100
V/℃
mΩ
mV/℃
uA
nA
gfs Forward Transconductance VDS=5V , ID=30A --- 24.4 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.8 36
Ω
Qg Total Gate Charge (4.5V) --- 9.82 ---
V
Qgs Gate-Source Charge --- 2.24 ---
Qgd Gate-Drain Charge
T
Turn-On Delay Time --- 6.4 ---
d(on)
Tr Rise Time --- 39 ---
T
Turn-Off Delay Time --- 20.8 ---
d(off)
Tf Fall Time
C
Input Capacitance --- 896 ---
iss
C
Output Capacitance --- 126 ---
oss
C
Reverse Transfer Capacitance
rss
=20V , VGS=4.5V , ID=12A
DS
VDD=15V , VGS=10V , RG=1.5Ω
I
=20A
D
V
=15V , VGS=0V , f=1MHz
DS
--- 5.54 ---
--- 4.7 ---
--- 108 ---
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
EAS Single Pulse Avalanche Energy5
=25V , L=0.1mH , IAS=15A
V
DD
24.6 --- --- mJ
Diode Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
IS Continuous Source Current
ISM Pulsed Source Current
VSD Diode Forward Voltage2
Note :
1.The data tested by surface mounted on a 1 inch
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is V
4.The power dissipation is limited by 175℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
and IDM , in real applications , should be limited by total power dissipation.
D
2
1,6
--- --- 50 A
2,6
2
FR-4 board with 2OZ copper.
VG=VD=0V , Force Current
=0V , IS=1A , TJ=25℃
V
GS
=25V,VGS=10V,L=0.1mH,IAS=22A
DD
--- --- 100 A
--- --- 1 V
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