Ubiq QM3002N3 Schematic [ru]
S
General Description
Product Summery
The QM3002N3 is the highest performance
trench N-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
The QM3002N3 meet the RoHS and Green
Product requirement , 100% EAS guaranteed
with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
BVDSS RDSON ID
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
DFN3X3 Pin Configuration
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage 30 V
VGS
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM Pulsed Drain Current2 56 A
EAS Single Pulse Avalanche Energy3 72 mJ
IAS Avalanche Current 21 A
PD@TC=25℃
PD@TA=25℃
T
Storage Temperature Range -55 to 150
STG
TJ Operating Junction Temperature Range -55 to 150
Continuous Drain Current, VGS @ 10V1 28 A
Continuous Drain Current, VGS @ 10V1 18 A
Continuous Drain Current, VGS @ 10V1 11.7 7.4 A
Continuous Drain Current, VGS @ 10V1 9.4 6 A
Gate-Source Voltage
Total Power Dissipation4 20.8 W
Total Power Dissipation4 4.2 1.67 W
Thermal Data
Symbol Parameter Typ. Max. Unit
R
Thermal Resistance Junction-Ambient 1 --- 75
θJA
R
θJA
R
Thermal Resistance Junction-Case1 --- 6
θJC
Thermal Resistance Junction-Ambient 1 (t ≤10s)
QM3002N3
N-Ch 30V Fast Switching MOSFETs
30V
D
S
18mΩ
G
S
Rating
10s Steady State
±20
--- 30
28A
Units
V
℃
℃
℃/W
℃/W
℃/W
1
Rev A.03 D061611
QM3002N3
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol Parameter Conditions Min. Typ. Max. Unit
BV
Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
DSS
△BV
Guaranteed Avalanche Characteristics
/△TJ
BVDSS Temperature Coefficient
Static Drain-Source On-Resistance2
Gate Threshold Voltage
V
Temperature Coefficient --- -5.1 ---
GS(th)
Drain-Source Leakage Current
Gate-Source Leakage Current
R
V
△V
DSS
DS(ON)
GS(th)
GS(th)
I
DSS
I
GSS
Reference to 25℃ , ID=1mA
VGS=10V , ID=15A --- 16 18
VGS=4.5V , ID=10A --- 24 30
VGS=VDS , ID =250uA
=24V , VGS=0V , TJ=25℃
V
DS
VDS=24V , VGS=0V , TJ=55℃
V
=±20V , VDS=0V
GS
--- 0.022 ---
1.0 1.5 2.5 V
--- --- 1
--- --- 5
--- ---
±100
gfs Forward Transconductance VDS=5V , ID=30A --- 19.4 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 5
Qg Total Gate Charge (4.5V)
=15V , VGS=4.5V , ID=15A
Qgs Gate-Source Charge --- 2.4 3.4
V
DS
--- 6.2 8.7
Qgd Gate-Drain Charge --- 2.5 3.5
T
Turn-On Delay Time
d(on)
=10V , VGS=10V , RG=3.3Ω
Tr Rise Time --- 7.6 14
T
Turn-Off Delay Time --- 20.8 42
d(off)
V
DD
I
=15A
D
--- 3 6.0
Tf Fall Time --- 4 8
C
Input Capacitance
iss
=15V , VGS=0V , f=1MHz
C
Output Capacitance --- 80 112
oss
C
Reverse Transfer Capacitance --- 65 91
rss
V
DS
--- 572 801
Symbol Parameter Conditions Min. Typ. Max. Unit
V/℃
mΩ
mV/℃
uA
nA
Ω
nC
ns
pF
EAS Single Pulse Avalanche Energy5
V
=25V , L=0.1mH , IAS=10A
DD
16 --- --- mJ
Diode Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
IS Continuous Source Current
ISM Pulsed Source Current
VSD Diode Forward Voltage2
1,6
2,6
--- --- 56 A
=0V , Force Current
V
G=VD
=0V , IS=1A , TJ=25℃
V
GS
trr Reverse Recovery Time
F=30A , dI/dt=100A/µs , T
Qrr Reverse Recovery Charge --- 3 --- nC
Note :
1.The data tested by surface mounted on a 1 inch
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is V
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
and IDM , in real applications , should be limited by total power dissipation.
D
2
FR-4 board with 2OZ copper.
I
=25V,VGS=10V,L=0.1mH,IAS=21A
DD
=25℃
J
2
--- --- 28 A
--- --- 1.2 V
--- 17 --- nS
Loading...