TS-market LORNET-36 User Manual

NON-LINEAR

JUNCTION DETECTOR

«LORNET-36»

USER MANUAL

CERTIFICATE

© TS-Market

Contents

1.Introduction ..........................................3

2. Specications ..................................... 5

3. Delivery set, design and

accessories ............................................. 6

4. Purpose of the Detector Basic

Units .........................................................8

5. Safety Measures ............................... 15

6. Operation Order. ...............................16

7. Search Recommendation ................19

CERTIFICATE ........................................21

1. General .............................................. 21

2. Delivery Set ....................................... 22

3.Warranty .............................................22

4. Importer ............................................. 23

6. Claims Data ....................................... 23

2

1.Introduction

MW non-linear junction detector “LORNET-36”
(further NLJD) is used for search and location of
electronic devices both in active and switch-off
state.
The detector operation is based on the property of
semiconductor components to generate a response
at the 2d and 3d harmonics when radiated by a
microwave probing signal.

Semiconductor components of articial origin

will have a higher level second harmonic while
semiconductor components of natural origin (e.g.

oxide lms) will have a higher level third harmonic

respectively.
An NLJD analyzes the 2d and 3d harmonics
response of the radiated objects, which enables

a quick and reliable identication of electronic

devices and natural oxide semiconductors.

The NLJD “LORNET-36” automatically nds the

best receiving frequency channel free of noise and

distortion providing awless operation even in the

complicated electromagnetic environment. Digital
processing of a demodulated signal used gives
maximum sensitivity.

3

A high gain parabolic antenna (20 dB gain at
3600 MHz) used in the device increases detection
range of non-linear elements and provides
their exact localization in space. For operator’s
convenience the detector is equipped with a laser
pinpointing to indicate the place to which the
maximum power of the probing signal is directed.
There are two types of radiated signals:

pulse modulated carrier with a duty cycle 160

­(Pulse).

-pulse modulated carrier with a duty cycle 20 (CW).

The CW mode is used to tap the detected signal in
the earphones to find active analog radio

microphones and to use the effect of acoustic
feedback to facilitate the search process.
The output power automatic control mode

significantly simplifies operator’s work.

“LORNET-36” simultaneously displays the 2d and
3d harmonics levels at its LED panel. Besides, the
2d and 3d harmonics levels can be estimated in
turn aurally by the click repetition rate reproduced
through a built-in loudspeaker or wireless
earphones.

4

2. Specications

2.1. Radiated signal types

•

pulse modulated carrier with a duty cycle of
160 (pulse).

•

pulse modulated carrier with a duty cycle of
20 (CW).

2.2. Carrier frequency step 13 MHz within a tuning
range of (3581.5 … 3607.5) MHz. Automatic
frequency selection. Possibility of radiation at
the carrier frequency with a minimum noise
level in the 2d harmonic receiver path.

2.3. Maximum radiated power in 160

≥ 18 W

2.4. Maximum radiated power in 20 (CW) duty

mode ≥ 12 W

cycle

2.5. Manual or automatic control of the radiated
power level. Power control range of 22 dB
down from the maximum output power value
with 11 level gradations

2.6. Transmitting antenna gain at 3600 MHz

≥ 20dB with a directional pattern width at -3
dB level ≤16°.

2.7. Sensitivity of radio receivers better than -110

dBm (the rst LED lights up).

2.8. Receivers tuning frequencies equal to the
transmitter double and triple frequencies -

pulse mode

5

7163…7215 MHz and 10744.5…10822.5 MHz
respectively.

2.9. Receiving path dynamic range ≥ 30 dB.
20 dB range of LED and 10 dB gain control
using the ATT button.

2.10. Time of continuous operation with a lithium­Ion battery at the maximum radiated power:

• ≥3 hours in the pulse duty cycle mode;

•

≥2 hours in the CW duty cycle mode.

2.11. Device weight ≤1.6 kg.

Operating conditions:

2.12.

• ambient temperature 5…40ºC.

• pressure ≥ 450 mm of mercury

3. Delivery set, design and accessories

3.1. The device includes units and accessories
stated in the Table below:

Description Q-ty

Receiver-transmitter unit with control unit and
built-in battery container

Changeable Li-Ion batteries 2
Container for battery charging 1
Charger for receiver-transmitter unit (CH1) 1
Wireless accessories including: receiving device,

earphones and charger (CH2)
Technical Description & User manual, Certicate

(in one piece)

6

Package 1

1

1

1

1

2 3

76

Fig.1.

5

4

- The appearance of the device and its charger are

shown in Fig. 1, where:

1. LED indicator;

2. Transceiver antenna unit combined with the

indicator ;

3. Control unit with an accumulator;

4. Parabolic antenna.

5. Screwed up cover of battery section

6.Container for battery charging;

7.Charger for receiver-transmitter unit (CH1);

Fig. 2 shows
a receiver for
wireless phones,
its charger (CH2)
and head phones.

Fig.2.

7

4. Purpose of the Detector Basic Units

4.1. The transceiver antenna with built-in LED

indicators is used for:

• Analysis of distortion and interference in the
instrument receiving path, which is made
each time the detector transmitter is switched
on. Therefore, if an interfering signal appears
during operation (in a complicated electromag­netic environment) it is necessary to turn the
detector transmitter off and on from time to
time thus selecting an optimal frequency auto­matically, which will provide the best sensitivity
as well as detection range of semiconductor
components.

• Generation of microwave probing signal, re­ception and digital processing of the 2nd and
the 3rd frequency harmonics. Simultaneous
display of the 2nd and the 3rd harmonics
levels gives the opportunity to distinguish with

a high reliability between signals of articial

semiconductors integrated in electronic de­vices and natural corrosive ones which may
appear at oxidized junction points of various
metals.

8