TSC TSB1184A Technical data
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TSB1184A
Pin Assignment:
1. Base
2. Collector
3. Emitter
Low Vce(sat) PNP Transistor
BV
Ic = - 3A
V
= - 50V
CEO
CE (SAT)
, = - 0.3V(typ.) @Ic / Ib = - 2A / - 0.1A
Features
Low V
CE (SAT).
Excellent DC current gain characteristics
Ordering Information
Part No. Packing Package
TSB1184ACP Tape & Reel TO-252
Structure
Epitaxial planar type.
PNP silicon transistor
Absolute Maximum Rating (Ta = 25
Parameter Symbol Limit Unit
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Power Dissipation TO-252 PD 1.0 W
Operating Junction Temperature TJ +150 oC
Operating Junction and Storage Temperature Range T
Note: 1. Single pulse, Pw = 2mS
o
C unless otherwise noted)
DC - 3 Collector Current
Pulse
- 50V V
CBO
- 50V V
CEO
- 6 V
EBO
IC
- 7 (note 1)
- 55 to +150
STG
A
o
C
Electrical Characteristics
Ta = 25 oC unless otherwise noted
Parameter Conditions Symbol Min Typ Max Unit
Static
Collector-Base Voltage IC = - 50uA, IE = 0 BV
Collector-Emitter Breakdown Voltage IC = - 1mA, IB = 0 BV
Emitter-Base Breakdown Voltage IE = - 50uA, IC = 0 BV
Collector Cutoff Current V
Emitter Cutoff Current V
Collector-Emitter Saturation Voltage IC / IB = - 2.0A / - 0.2A V
DC Current Transfer Ratio V
Transition Frequency V
Output Capacitance V
= - 40V, IE = 0 I
CB
= - 4V, IC = 0 I
EB
= - 2V, IC = - 1A hFE 120 -- 560
CE
= - 5V, IC = - 100mA,
CE
f = 100MHz
= - 10V, f=1MHz Cob 55 -- pF
CB
CBO
EBO
CE(SAT)
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Classification Of h
Rank Q R S
Range 120 - 270 180 - 390 270 - 560
FE
- 50 -- -- V
CBO
- 50 -- -- V
CEO
- 6 -- -- V
EBO
-- -- - 1 uA
-- -- - 1 uA
-- - 0.3 - 0.5 V
fT -- 80 -- MHz
TSB1184A 1-3 2003/12 rev. A
Electrical Characteristics Curve
TSB1184A 2-3 2003/12 rev. A
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