TSC MBRF830CT, MBRF9200CT Technical data

F
M
M
s
Maximum Average Forward Rectified Current
)
2. Thermal Resistance from Junction to Case Per Leg.
PIN 1
PIN 3
PIN 2
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MBRF830CT THRU MBRF8100CT
Isolation 8.0 AMPS. Schottky Barrier Rectifiers
eatures
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
 Metal silicon junction, majority carrier conduction  Low power loss, high efficiency  High current capability, low forward voltage drop  High surge capability  For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection  High temperature soldering guaranteed:
260
Cases: ITO-220AB molded plastic  Terminals: Leads solderable per MIL-STD-750, Method
Polarity: As marked  Mounting position: Any  Mounting torque: 5 in. - lbs. max  Weight: 0.08 ounce, 2.24 grams
Rating at 25ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage
o
C/10 seconds,0.25”(6.35mm)from case
echanical Data
2026
.110(2.8) .098(2.5)
Dimensions in inches and (millimeters)
aximum Ratings and Electrical Characteristics
MBRF
Type Number
Symbol
V
RRM
V
RMS
VDC
MBRF
830CT
835CT
30 35 40 45 50 60 100 V 21 24 28 31 35 42 30 35 40 45 50 60 100 V
MBR
840CT
Voltage Range 30 to 100 Volts
8.0 Amperes
ITO-220AB
.134(3.4)DIA .113(3.0)DIA
.272(6.9) .248(6.3)
MBRF
MBRF
845CT
850CT
MBRF 860CT
.112(2.85) .100(2.55)
.606(15.5) .583(14.8)
.543(13.8) .512(13.2)
MBRF
8100CT
Unit
70 V
See Fig. 1 Per Leg
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage at (Note 1) I
Maximum Instantaneous Reverse Current at Rated DC Blocking Voltage @Tc=25
Typical Thermal Resistance Per Leg (Note2 Operating Junction Temperature Range T Storage Temperature Range TSTG
Notes: 1. Pulse Test: 300us Pulse Width, 1% Duty Cycle
= 4A, Tc=25OC
F
@ Tc=125
I
(AV)
I
FSM
VF
0.55 0.70 0.80 V
I
R
RθJC
-65 to +150
J
-65 to +150
- 114 -
8 4
150 A
A
5.0 50
6.0
mA mA
/W
℃ ℃
RATINGS AND CHARACTERISTIC CURVES (MBRF830CT THRU MBRF8100CT)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
10
8
6
4
2
AVERAGE FORWARD CURRENT. (A)
0
0
50 100 150
CASE TEMPERATURE. ( C)
o
FIG.3- TYPICAL REVERSE CHARACTERISTICS
100
0
Tj=100 C
10
0
Tj=75 C
1
0
Tj=25 C
INSTANTANEOUS REVERSE CURRENT.(mA)
0.1
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
75
50
25
1
SURGE CURRENT
8.3ms Single Half Sine Wave JEDEC Method
2 5 10 20 10050
NUMBER OF CYCLES AT60Hz
175
150
125
100
PEAK FORWARD SURGE CURRENT. (A)
FIG.4- TYPICAL FORWARD CHARACTERISTICS
50
10
R
B
M
1.0
INSTANTANEOUS FORWARD CURRENT. (A)
4
8
F
R
B
-M
T
C
0
3
8
F
MBRF850CT-MBRF860CT
T
C
5
BRF8100CT
M
0.01
20 40 60 80 100
0 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
120
140
- 115 -
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE. (V)
1.0 1.1
FIG.5- TYPICAL JUNCTION CAPACITANCE
4000
2000
1000
800
600
400
200
JUNCTION CAPACITANCE.(pF)
100
0.1 0.4 1.0 4 10 40 100
M
B
R
F
830C
T
-M
MBRF8100CT
REVERSE VOLTAGE. (V)
o
Tj=25 C
T
Pulse Width=300 s 1% Duty Cycle
B
R
F
860C
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