TSC HS2A, HS2M Technical data

F
M
M
s
3. Mounted on P.C.B. with 0.4”x0.4” ( 10 x
10 mm ) Copper Pad Areas
.
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HS2A THRU HS2M
2.0 AMPS. High Efficient Surface Mount Rectifiers
eatures
Glass passivated junction chip.  For surface mounted application  Low forward voltage drop  Low profile package  Built-in stain relief, ideal for automatic
placement
Fast switching for high efficiency  High temperature soldering:
260℃/10 seconds at terminals Plastic material used carries Underwriters
Laboratory Classification 94V-O
echanical Data
Cases: Molded plastic  Terminals: Solder plated  Polarity: Indicated by cathode band  Packing: 12mm tape per E1A STD RS-481  Weight: 0.093 gram
50 to 1000 Volts
Current
2.0 Amperes
SMB/DO-214AA
.082(2.08) .076(1.93)
.103(2.61) .078(1.99)
.056(1.41) .035(0.90)
.187(4.75) .167(4.25)
.208(5.28) .200(5.08)
.008(.20) .004(.10)
.012(.31) .006(.15)
.147(3.73) .137(3.48)
.012(.31) .006(.15)
Dimensions in inch e s a n d (millimeters)
aximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current See Fig. 2 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 2.0A Maximum DC Reverse Current @T
=25 at Rated DC Blocking Voltage
A
@ T
=100
A
Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Maximum Thermal Resistance (Note 3)
Operating Temperature Range Storage Temperature Range
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
Symbol HS
2A
V V
VDC I
(AV)
I
FSM
VF
Trr
R
TSTG
50 400 200 300 400 600 800 1000
RRM
35 70 140 210 280 420 560 700
RMS
50
IR
Cj
θ
JA
TJ
HS
HS
HS
HS
HS
2B
2D
2F
2G
2J
100 200 300 400 600 800 1000
2.0 A 50 A
1.0 1.3
5.0
100 50 75 nS 50 30 pF
80
-55 to +150
-55 to +150
HS
HS
2K
Unit
2M
V V V
1.7 V uA
uA
/W
℃ ℃
- 302 -
RATINGS AND CHARACTERISTIC CURVES (HS2A THRU HS2M)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W NONINDUCTIVE
(+) 50Vdc (approx) (-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
FIG.3- TYPICAL REVERSE CHARACTERISTICS
1000
100
10
1
INSTANTANEOUS REVERSE CURRENT.( A)
0.1 0
10W NONINDUCTIVE
DUT
1W
NON INDUCTIVE
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance= 50 ohms
20 40 60 80 100 120
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
OSCILLOSCOPE (NOTE 1)
0
Tj=100 C
0
Tj=25 C
(-)
PULSE GENERATOR (NOTE 2)
(+)
140
+0.5A
-0.25A
-1.0A
trr
0
1cm
SET TIME BASE FOR 5/ 10ns/ cm
FIG.4- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
1
0.1
0.01
INSTANTANEOUS FORWARD CURRENT. (A)
0.001
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
FIG.2- MAXIMUM FORWARD CURRENT
DERATING CURVE
3.0
2.5
2.0
1.5
1.0
0.5
0
0
25 50 75 100 125 150 175
AVERAGE FORWARD CURRENT. (A)
LEAD TEMPERATURE. ( C)
P.C.B.MOUNTED
0.27X0.27"(7.0X7.0mm) COPPER PADAREAS
o
G
HS2
HS2A-HS2D
HS2J-HS2M
FORWARD VOLTAGE. (V)
FIG.5- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
70
60
50
40
30
20
10
PEAK FORWARD SURGE CURRENT. (A)
0
2 5 10 20 10050
1
NUMBER OF CYCLES AT60Hz
8.3ms Single Half Sine Wave JEDEC Method
- 303 -
FIG.6- TYPICAL JUNCTION CAPACITANCE
175
150
125
100
75
50
JUNCTION CAPACITANCE.(pF)
25
0
0.1 0.5 1 52 10 20 50 100 200
HS2A-HS2G
HS2J-HS2M
REVERSE VOLTAGE. (V)
500
1000
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