TriQuint Semiconductor Inc TGF4350-EPU Datasheet

Advance Product Information

d

-

B

B

300um Discrete pHEMT TGF4350-EPU

Key Features and Performance

• 0.25um pHEMT Technology

• DC 22 GHz Frequency Range

• 1.2 dB NF, 14.5 dB Associated
Gain at 10 GHz, 3V Operation

• Floating Source Configuration

• Chip Dimensions 0.5080 mm x

0.4064 mm

Primary Applications

• Low Noise amplifiers

17

F = 10 GHz
Vd = 3 V

15

Iq = 15 mA

13

11

9

7

Output Power-dBm, Gain-

5

16

15

14

13

12

11

10

9

8

7

6

Pout (dBm)

Gain (dB)

PAE (%)

F = 10 GHz

Associated Gain - d

3

1

-12 -8 -4 0 4 8 12

2.4

2.2

2.0

1.8

1.6

1.4

1.2

Noise Figure - d

1.0

0.8

0.6

0.4

5 101520253035404550

Drain Current - mA

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

Inp ut P owe r - dBm

80

70

60

50

40

30

20

10

0

NF (dB) Vd = 3 V

NF (dB) Vd = 5 V

NF (dB) Vd = 8 V

Gain ( dB) Vd = 3 V

Gain ( dB) Vd = 5 V

Gain ( dB) Vd = 8 V

Power Added Efficiency

1

1

Advance Product Information

TGF4350-EPU

Electrical Characteristics

RECOMMENDED MAXIMUM RATINGS

Symbol Parameter Value Notes

+

V

+

I
P

D

P

IN

T

CH

T

M

T

STG

1/ These ratings apply to individual FET

2/ Junction operating temperature will directly affect the device mean time to failure

(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.

3/ Nominal value of Idss

Positive Supply Voltage 7 V
Positive Supply Current .085A 3/
Power Dissipation 0.6 W
Input Continuous Wave Power 20 dBm
Operating Channel Temperature

Mounting Temperature (30 seconds)
Storage Temperature

150 °C
320 °C

-65 °C to 150 °C

1/, 2/

DC PROBE TESTS

= 25 °C ± 5°C)

(T

A

Symbol Parameter Minimum Maximum Value

Idss Saturated Drain Current (info

30 141 mA

only)
V
BV
BV

P1-5

GS1

GD1-5

Pinch-off Voltage -1.5 -0.5 V

Breakdown Voltage gate-source -30 -8 V

Breakdown Voltage gate-drain -30 -8 V

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

2