TriQuint Semiconductor Inc TGF4124-EPU Datasheet
24 mm Discrete HFETTGF4124-EPU
4124
• 0.5 um gate finger length
• Nominal Pout of 12 Watts at 2.3 GHz
• Nominal PAE of 51.5% at 2.3 GHz
• Nominal Gain of 10.8 dB at 2.3 GHz
• Die size 36.0 x 81.0 x 4.0 mils
(0.914 x 2.057 x 0.102 mm)
TGF4124-EPU RF Performance at F = 2.3 GHz
Vd = 8.0 V, Vg = -1.1 V, Iq = 2.17 A and TA = 25°C
50
Pout
48
46
44
42
40
38
36
Output Power (dBm)
34
32
30
20 22 24 26 28 30 32
PAE
55
50
45
40
35
30
25
20
15
Power Added Efficiency %
10
5
Input Power (dBm)
TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com
1
TGF4124-EPU RF Performance for Vd = 7.0 V, F = 2.3 GHz, and TA = 25°C
Quiescent Id is 2.24 A (Vg = -1.1 V), 1.81 A (Vg = -1.3 V), and 1.37 A (Vg = -1.5 V)
140
42
130
120
110
100
90
80
70
Pout
60
Predicted Channel Temp (°C)
50
40
55
50
45
40
35
Tch
Vg = -1.1V
Vg = -1.3 V
Vg = -1.5 V
41
40
39
38
37
36
35
Output Power (dBm)
34
33
32
30
25
20
Power Added Efficiency %
15
10
5
14
13
12
11
10
Gain (dB)
9
8
7
20 21 22 23 24 25 26 27 28 29 30 31 32
Vg = -1.1V
Vg = -1.3 V
Vg = -1.5 V
Input Power (dBm)
Vg = -1.1V
Vg = -1.3 V
Vg = -1.5 V
TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com
2
TGF4124-EPU RF Performance for Vd = 8.0 V, F = 2.3 GHz, and TA = 25°C
Quiescent Id is 2.17 A (Vg = -1.1 V), 1.80 A (Vg = -1.3 V), and 1.40 A (Vg = -1.5 V)
150
42
140
130
120
110
100
90
80
Pout
70
Predicted Channel Temp (°C)
60
50
55
50
45
40
35
Tch
Vg = -1.1V
Vg = -1.3 V
Vg = -1.5 V
41
40
39
38
37
36
35
Output Power (dBm)
34
33
32
30
25
20
Power Added Efficiency %
15
10
5
14
13
12
11
10
Gain (dB)
9
8
7
20 21 22 23 24 25 26 27 28 29 30 31 32
Vg = -1.1V
Vg = -1.3 V
Vg = -1.5 V
Input Power (dBm)
Vg = -1.1V
Vg = -1.3 V
Vg = -1.5 V
TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com
3
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