TriQuint Semiconductor Inc TGF4118-EPU Datasheet

18 mm Discrete HFETTGF4118-EPU

 4118

• 0.5 um gate finger length

• Nominal Pout of 9.0 Watts at 2.3 GHz

• Nominal PAE of 53% at 2.3 GHz

• Nominal Gain of 11.5 dB at 2.3 GHz

• Die Size 36.0 x 81.0 x 4.0 mils

(0.914 x 2.057 x 0.102 mm)

TGF4118-EPU RF Performance at F = 2.3 GHz

Vd = 8.0 V, Vg = -1.1 V, Iq = 1.69 A and TA = 25°C

50

Pout

48
46
44
42
40
38
36

Output Power (dBm)

34
32
30

20 22 24 26 28 30 32

PAE

55

50

45

40

35

30

25

Power Added Efficiency %

20

15

Input Power (dBm)

TriQuint Semiconductor Texas Phone: [phone] Fax [phone] Web: www.triquint.com

1

TGF4118-EPU RF Performance for Vd = 7.0 V, F = 2.3 GHz, and TA = 25°C

Quiescent Id is 1.74 A (Vg = -1.1 V), 1.37 A (Vg = -1.3 V), and 1.02 A (Vg = -1.5 V)

130
120
110
100

90
80
70
60

Pout

50

Predicted Channel Temp (°C)

40
30

60
55
50
45

Tch

Vg = -1.1 V
Vg = -1.3 V
Vg = -1.5 V

42
41
40
39
38
37
36
35

Output Power (dBm)

34
33
32

40
35
30
25

Power Added Efficiency %

20
15

15
14

13
12
11

Gain (dB)

10

9
8

7

20 21 22 23 24 25 26 27 28 29 30 31

Vg = -1.1 V
Vg = -1.3 V
Vg = -1.5 V

Input Power (dBm)

Vg = -1.1 V
Vg = -1.3 V
Vg = -1.5 V

TriQuint Semiconductor Texas Phone: [phone] Fax [phone] Web: www.triquint.com

2

TGF4118-EPU RF Performance for Vd = 8.0 V, F = 2.3 GHz, and TA = 25°C

Quiescent Id is 1.69 A (Vg = -1.1 V), 1.38 A (Vg = -1.3 V), and 1.06 A (Vg = -1.5 V)

140

42
130
120
110
100

90
80

Pout

70
60

Predicted Channel Temp (°C)

50
40

60
55
50
45
40

Tch

Vg = -1.1 V
Vg = -1.3 V
Vg = -1.5 V

41

40

39

38

37

36

35

Output Power (dBm)

34

33

32

35
30
25

Power Added Efficiency %

20
15

15

14

13

12

11

Gain (dB)

10

9

8

20 21 22 23 24 25 26 27 28 29 30 31

Vg = -1.1 V
Vg = -1.3 V
Vg = -1.5 V

Input Power (dBm)

Vg = -1.1 V
Vg = -1.3 V
Vg = -1.5 V

TriQuint Semiconductor Texas Phone: [phone] Fax [phone] Web: www.triquint.com

3