TriQuint Semiconductor Inc TGF4112-EPU Datasheet

12 mm Discrete HFETTGF4112-EPU

 4112

• 0.5 um gate finger length

• Nominal Pout of 6.0 Watts at 2.3 GHz

• Nominal PAE of 54.5% at 2.3 GHz

• Nominal Gain of 12.7 dB at 2.3 GHz

• Die size 36.0 x 81.0 x 4.0 mils

(0.914 x 2.057 x 0.102 mm)

TGF4112-EPU RF Performance at F = 2.3 GHz

Vd = 8.0 V, Vg = -1.3 V, Iq = 0.75 A and TA = 25°C

46

Pout

44
42
40
38
36
34
32

Output Power (dBm)

30
28
26

14 15 16 17 18 19 20 21 22 23 24 25 26 27 28

PAE

55
50
45
40
35
30
25
20
15

Power Added Efficiency %

10
5

Input Power (dBm)

TriQuint Semiconductor Texas Phone: [phone] Fax [phone] Web: www.triquint.com

1

TGF4112-EPU RF Performance for Vd = 7.0 V, F = 2.3 GHz, and TA = 25°C

Quiescent Id is 0.9 A (Vg = -1.1 V), 0.72 A (Vg = -1.3 V), and 0.61 A (Vg = -1.5 V)

140

38
130
120
110
100

90
80
70
60

Pout

50

Predicted Channel Temp (°C)

40
30

60
55
50
45
40

Tch

Vg = -1.1V
Vg = -1.3 V
Vg = -1.5 V

37

36

35

34

33

32

31

30

Output Power (dBm)
29
28
27

35
30
25
20

Power Added Efficiency %

15
10

5

15

14

13

12

11

Gain (dB)

10

9

8

14 15 16 17 18 19 20 21 22 23 24 25 26 27 28

Vg = -1.1V
Vg = -1.3 V
Vg = -1.5 V

Input Power (dBm)

Vg = -1.1V
Vg = -1.3 V
Vg = -1.5 V

TriQuint Semiconductor Texas Phone: [phone] Fax [phone] Web: www.triquint.com

2

TGF4112-EPU RF Performance for Vd = 8.0 V, F = 2.3 GHz, and TA = 25°C

Quiescent Id is 0.92 A (Vg = -1.1 V), 0.75 A (Vg = -1.3 V), and 0.65 A (Vg = -1.5 V)

140

38

130
120
110
100

90
80
70
60
50

Predicted Channel Temp (°C)

Pout

40
30

60
55
50
45
40

Tch

Vg = -1.1V
Vg = -1.3 V
Vg = -1.5 V

37
36
35
34
33
32
31
30

Output Power (dBm)
29
28
27

35
30
25
20

Power Added Efficiency %

15
10

5

15

14

13

12

11

Gain (dB)

10

9

8

14 15 16 17 18 19 20 21 22 23 24 25 26 27 28

Vg = -1.1V
Vg = -1.3 V
Vg = -1.5 V

Input Power (dBm)

Vg = -1.1V
Vg = -1.3 V
Vg = -1.5 V

TriQuint Semiconductor Texas Phone: [phone] Fax [phone] Web: www.triquint.com

3