TriQuint Semiconductor Inc TGC1439A-EPU Datasheet
Advance Product Information
P
18 - 20 GHz 5-Bit Phase Shifter TGC1439A-EPU
Key Features and Performance
• 0.5um pHEMT Technology
• 18-20 GHz Frequency Range
• 3º Typical RMS Phase Shift Error
• -5 dB Typical Insertion Loss
• Control Voltage: -2.5 V to -5.0 V
• Compact 1.27 mm2 Die Area
The TriQuint TGC1439A-EPU is a 5-Bit Digital Phase
Shifter MMIC design using TriQuint’s proven 0.5 µm
Power pHEMT process to support a variety of K-Band
phased array applications including satellite
communication systems.
Primary Applications
• Phased Arrays
• Satellite Communication Systems
May 3, 2000
The 5-bit design utilizes a compact topology that
achieves a 1.27 mm
2
die area, high performance and
good tolerance to control voltage variation
The TGC1439A provides a 5-Bit digital phase shift
function with a nominal -5 dB insertion loss and 3º
RMS phase shift error over a bandwidth of 18-20 GHz.
The TGC1439A requires a minimum of off-chip
components and operates with a -5.0 V to -2.5 V
control voltage range. Each device is RF tested onwafer to ensure performance compliance. The device
is available in chip form.
TGC1439A Typical RF Performance (Fixtured) TGC1439A Typical RF Performance (Fixtured)
-3
Insertion Loss
-4
-5
-6
-7
-8
-9
-10
Insertion Loss (dB)
-11
-12
-13
17 18 19 20 21
Frequency (GHz)
hase Error
40
35
30
25
20
15
10
5
0
-5
-10
TGC1439A Typical RF Performance (Fixtured)
12
9
6
3
0
-3
-6
-9
Phase Shift Error (deg)
-12
18 GHz
19 GHz
20 GHz
0 4 8 12 16 20 24 28
Phase State
0
-2
-4
-6
-8
-10
-12
-14
Return Loss (dB)
Phase Shift Error (deg)
-16
-18
-20
17 18 19 20 21
Frequency (GHz)
Input
Output
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
1
Advance Product Information
May 3, 2000
Electrical Characteristics
TGC1439A
RECOMMENDED MAXIMUM RATINGS
Symbol Parameter Value Notes
-
V
+
I
P
D
P
IN
T
CH
T
M
T
STG
Control Voltage -8 V
Control Current 1 mA 3/
Power Dissipation 0.1 W
Input Continuous Wave Power 20 dBm
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
150 °C
320 °C
-65 °C to 150 °C
1/, 2/
1/ These ratings apply to each individual FET
2/ Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/ Total current for the entire MMIC
ON-WAFER RF PROBE CHARACTERISTICS
(T
= 25 °C ± 5°C)
A
Symbol Parameter Test Condition
Vctnl=0V / -2.5V
IL Insertion Loss F = 18, 19, 20 GHz
States 0 and 31
IRL Input Return
Loss
ORL Output Return
Loss
PS Phase Shift F = 18, 19, 20 GHz
1200
1000
800
600
400
Number of Devices
200
0
-5.0 -4.9 -4.8 -4.7 -4.6 -4.5 -4.4 -4.3 -4.2 -4.1 -4.0
F = 18, 19, 20 GHz
States 0 and 31
F = 18, 19, 20 GHz
States 0 and 31
State 31
19 GHz Reference State Insertion Loss (dB)
Limit
Min Nom Max
-5.5 -4.6 -4.0 dB
-16 -11 dB
-14 -11 dB
342 344 350 deg
Units
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
2
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