TriQuint Semiconductor Inc TGC1411-EPU Datasheet

Advance Product Information

0.3 - 10 GHz Downconverter TGC1411-EPU

Key Features and Performance

• 0.25um pHEMT Technology

• 0.3-10 GHz RF/LO Frequency Range

• 0.15-2.5 GHz IF Frequency Range

• Nominal Conversion Gain of 12 dB

• Bias 3-5V @ 26 mA

• Chip Dimensions 1.8 mm x 2.6mm

Primary Applications

• Satellite Systems

The TriQuint TGC1411-EPU is a double balanced
MMIC mixer design using TriQuint’s proven 0.25 um
Power pHEMT process to support a variety of
communication system applications including satellite.

The double balanced design consists of an integrated
Gilbert cell mixer core, RF/LO baluns, differential
combiner, and output driver amplifier. The TGC1411
may be operated from a single +3 V to +5 V power
supply with typical current draw of 26 mA. The
nominal LO power requirement is -5 dBm. The
TGC1411 may also be operated as an up-converter.

The TGC1411 requires a minimum of off-chip
components employing only a 100 pF off-chip bypass
capacitor for the power supply line. No additional off­chip RF matching components are required. Each
device is 100% DC and RF tested on-wafer to ensure
performance compliance. The device is available in
chip form.

RF

IN

IF

OUT

LO

IN

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

• Point-to-Point Radio

TGA1411 Typical Down-Conversion Gain

TGC 1411

18

15

12

9

Conversion Gain (dB)

6

3

0.1 1.1 2.1 3.1 4.1 5.1 6.1 7.1 8.1 9.1 10.1

TGA1411 Typical P1dB and SSB Noise Figure

TGC 1411

1
0

-1

-2

-3

-4

-5

-6

Output P1dB (dBm)

-7

-8

-9

0.1 1.1 2.1 3.1 4.1 5.1 6.1 7.1 8.1 9.1 10.1

LSB, +5.0V, LO = -5dBm, +25C

RF Frequency (GHz)

LSB, +5.0V, LO = -5dBm, +25C

P1dB

RF Frequency (GHz)

Noise

Figure

IF=151MHz
IF=501MHz
IF=1001MHz
IF=1501MHz
IF=2001MHz
IF=2501MHz

18
17
16
15
14
13
12
11

SSB Noise Figure (dB)

10
9
8

TriQuint Semiconductor Texas : [phone] Fax [phone] Web: www.triquint.com

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Advance Product Information

+

D

IN

CH

M

STG

Test FET

Test FET

Test FET

Electrical Characteristics

RECOMMENDED MAXIMUM RATINGS

Symbol Parameter Value Notes

+

V
I
P
P
T

T
T

1/ These ratings apply to each individual FET

2/ Junction operating temperature will directly affect the device mean time to failure

(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.

3/ Total current for the entire MMIC

Positive Supply Voltage 8 V
Positive Supply Current 80 mA 3/
Power Dissipation 0.64 W
Input Continuous Wave Power 14 dBm
Operating Channel Temperature

Mounting Temperature (30 seconds)
Storage Temperature

150 °C
320 °C

-65 °C to 150 °C

1/, 2/

DC PROBE TESTS

(TA = 25 °C ± 5°C)

Symbol Parameter Minimum Maximum Value

VP
BV
BV

Pinch-off Voltage -1.5 -0.5 V
Breakdown Voltage gate-source -30 -8 V
Breakdown Voltage gate-drain -30 -8 V

ON-WAFER RF PROBE CHARACTERISTICS

(TA = 25 °C ± 5°C)

Symbol Parameter Test Condition

Vd=5V, LO=-5dBm

G Conversion

Gain

FRF = 1.0 GHz
FLO = 1.6 GHz

Limit

Units

Min Nom Max

13 16 20 dB

dB
ILO LO Isolation FLO = 1.6 GHz - -30 -20 dB
P1dB Output P1dB FRF = 1.0 GHz

-5 -1 - dBm

FLO = 1.6 GHz

IDC DC Current - 26 35 mA

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : [phone] Fax [phone] Web: www.triquint.com

2