TriQuint Semiconductor Inc TGA9083-EEU Datasheet
TGA9083-EEU Power Amplifier
6.5 to 11.5-GHz Frequency Range
●
5-Watt Output Power at 7V , 6-W at 8V, 8-W at 9 Volt Drain Bias
●
19-dB Typical Small Signal Gain
●
40% Power Added Efficiency at 7V, 35% PAE at 9 Volt Drain Bias
●
12-dB Typical Input Return Loss, 9- dB Typical Output Return Loss
●
On-Chip Active Gate Bias Circuit Option Simplifies Biasing
●
4, 521 x 3,048 x 0,100 mm (0.178 x 0.120 x 0.004 in.)
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PHOTO ENLARGEMENT
O R , I N C .T R I Q U I N T S E M I C O N D U C T
9083
DESCRIPTION
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465
The TriQuint TGA9083 - EEU is a monolithic power amplifier which operates from 6.5 to
11.5 GHz. This device is currently classified as an Engineering Evaluation Unit. This t wo stage power
amplifier partially consists of a 2.5 -mm pHEMT driving a 11.36 -mm pHEMT at the output. The
TGA9083-EEU is capable of providing 8 Watts of output power with 35% PAE when biased at 9 Volts.
Typical 7 Volts operation provides 5 Watts of output power with a power-added efficiency of 40
percent. Typical small signal gain is 19-dB. In balanced configuration, 12 Watts of output power is
achievable with 40% PAE.
The TGA9083-EEU is fabricated using TI’s 0.25um T-gate power pHEMT process. This device offer s
either standard gate biasing or an on-chip active gate bias circuit which simplifies gate biasing. The
active gate bias (AGB) circuit requires a - 5 V supply. This amplifier's output power and high efficiency
over 6.5 to 11.5 GHz make it a viable power amp solution in applications such as point-to-point radio ,
phased-array radar, and telecommunications.
Bond pad and backside metallization is gold plated for compa tibility with eutectic alloy attachment
methods as well as with thermocompression and thermosonic wire -bonding processes.
The TGA9083 - EEU is supplied in chip for m and is readily assembled using automated equipment.
Ground is provided to the circuitr y through vias to the backside metallization.
• www.triquint.com
TGA9083-EEU
TYPICAL
OUTPUT POWER
TYPICAL
POWER-ADDED
EFFICIENCY
40
38
36
34
32
30
28
Pout (dBm)
26
24
22
20
6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5
Frequency
(GHz)
50
45
40
35
30
PAE (%)
25
PIN= 21 dBm
= 1.1 A
I
D
= 30 ° C
T
A
Drain Voltage:
P
= 21 dBm
IN
= 1.1 A
I
D
= 30 ° C
T
A
7 V
8 V
9 V
TYPICAL
SMALL SIGNAL GAIN
20
15
10
6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5
Frequency
(GHz)
40
35
30
25
20
15
10
Small Signal Gain (dB)
5
0
6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5
Frequency
(GHz)
Drain Voltage:
ID = 1.1 A
= 30 ° C
T
A
Drain Voltage:
7 V
8 V
9 V
7 V
8 V
9 V
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465
• www.triquint.com
2
TGA9083-EEU
TYPICAL
INPUT RETURN LOSS
TYPICAL
OUTPUT RETURN LOSS
0
5
10
15
20
Input Return Loss (dB)
25
30
6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5
Frequency
0
5
10
15
(GHz)
ID = 1.1 A
= 30 ° C
T
A
Drain Voltage:
= 1.1 A
I
D
= 30 ° C
T
A
7 V
8 V
9 V
TYPICAL
DRAIN CURRENT
20
Output Return Loss (dB)
25
30
6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5
Frequency
(GHz)
3000
2500
2000
1500
Id (mA)
1000
500
0
6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5
Frequency
(GHz)
Drain Voltage:
7 V
8 V
9 V
PIN= 21 dBm
= 1.0 to 1.1 A
I
D
= 30 ° C
T
A
Drain Voltage:
7 V
8 V
9 V
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465
• www.triquint.com
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