TriQuint Semiconductor Inc TGA8622-SCC Datasheet

Product Data Sheet

2 - 20 GHz Gain Block Amplifier TGA8622-SCC

Key Features and Performance

• 2 to 20 GHz Frequency Range

• 7.5 dB Gain with Greater than 30dB
Gain-Control Capability

• 20 dBm Output Power at 1 dB Gain
Compression

• 7 dB Noise Figure

• Input and Output SWR 1.7:1 Midband

• 2.769 x 2.159 x 0.152 mm (0.109 x

0.085 x 0.006 in.)

Description

The TriQuint TGA8622-SCC is a broadband general-purpose amplifier that operates
over the 2 to 20 GHz frequency range. Six 200um dual-gate FETs provide the
amplifier with a typical gain of 7.5 dB. Midband input and output SWRs are typically

1.7:1. This amplifier is directly cascadable and can be used in both gain control and
active temperature compensation applications. Ground is provided to the circuitry
through vias to the backside metallization.

The TGA8622-SCC is available in chip form and is readily assembled using
automated equipment. The device bond pads and backside are gold plated for
compatibility with eutectic alloy attach methods as well as thermocompression and
thermosonic wire-bonding processes.

TriQuint Semiconductor Texas Phone: [phone] Fax: [phone] Web: www.triquint.com

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TYPICAL
SMALL-SIGNAL
POWER GAIN

Gp vs. V

CTRL

Product Data Sheet

TGA8622-SCC

V

for particular gain levels is shown for reference only and may vary from device to device.

CTRL

TYPICAL
NOISE FIGURE

NF vs. V

CTRL

TYPICAL
OUTPUT POWER

P

vs. V

1dB

CTRL

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TYPICAL

…

…

.

.

…

/

RETURN LOSS

Product Data Sheet

TGA8622-SCC

ABSOLUTE
MAXIMUM
RATINGS

Positive supply voltage, V+………………………………………………………………………………….8 V
Positive supply voltage range w ith respect to negative supply voltage, V+ - V-……………………

0 V to 12 V
Negative supply voltage range, V-………………………………………………………………………… 0 V to -5 V
Gain control voltage range, V
Gain control voltage range w ith respect to positive supply voltage, V

Positive supply current, I+…..………………………………………………………………………………
Pow er dis sipation, P

, at (or below ) 25oC base-plate temperature *…………………………………

D

Operating Channel temperature, T
Mounting temperature (30 sec.), T
Storage temperature range, T

Ratings over oper ating channel temperature range, T

…………………………………………………………………………

CTRL

……………………………

CTR L

-5 V to 4 V

0 V to -10 V

370 mA

2.9 W

**………………………………………………………………………150oC

CH

…………………………………………………………………………320oC

M

……………………………………………………………………………-65 to 150oC

STG

(unless otherwise noted).

CH

Stresses beyond those listed under "A bsolute Maximum Ratings" may caus e per manent damage to the dev ice.
These are str ess ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "RF Charac teristics" is not implied. Exposur e to abs olute maximum rated conditions
for extended periods may af f ect device reliability.

* For operation abov e 25

o

C base-plate temperature, derate linearly at the rate of 6.1 mW

** Operating channel temperature ( T

) w ill d ir e c tly af f e c t t h e d e v ic e MTTF. Fo r ma x imum li f e, i t is r e c ommen d e d

CH

o

C.

that channel temperature be maintained at the low est possible level.

TriQuint Semiconductor Texas Phone: [phone] Fax: [phone] Web: www.triquint.com

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