TriQuint Semiconductor Inc TGA8399B-EPU Datasheet
Advance Product Information
6-13 GHz Low Noise Amplifier TGA8399B-EPU
Key Features and Performance
• 3 Stage LNA 0.25um pHEMT Technology
• 6-13 GHz Frequency Range
• 1.75 dB Typical Noise F igure Midband
• 25 dB Nominal Gain
• High Input Power Handling: ~ 20dBm
• Balanced Input for Low VSWR
• 5V @ 65mA Self Bias
28
26
24
22
20
18
16
14
Small Signal Gain (dB)
12
10
8
6 7 8 9 10 11 12 13
Gain
Output RL
Input RL
Frequency (G H z )
0
-3
-6
-9
-12
-15
-18
-21
-24
-27
-30
Primary Applications
• Point-to-Point Radio
Release Status
• Engineering Prototype Unit (EPU)
samples available
Return Loss (dB)
Typical Measured Small Signal Gain & RL
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
Noise Figure (dB)
2.0
1.5
1.0
6 7 8 9 10 11 12 13
Pout
NF
Frequency (GH z)
14
13
12
11
10
9
8
7
6
5
4
P1dB (dBm)
Chip Dimensions 3.07mm x2.41mm x 0.152mm
Typical Measured NF and Pout
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all
electrical and process specifications.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
1
Advance Product Information
TA8399B Performance vs Temperature
30
29
28
27
26
25
24
23
Small Signal Gain (dB)
22
21
20
6 7 8 9 10 11 12 13
Frequency (GHz)
5
+125C
+75C
+50C
+25C
+0C
-25C
-55C
4
3
2
Noise Figure (dB)
1
0
6 7 8 9 10 11 12 13
Frequency (GHz)
15
14
13
12
11
10
9
Output P1dB (dBm)
8
7
6
5
7 8 9 10 11 12 13
Frequency (GHz)
+125C
+75C
+50C
+25C
+0C
-25C
-55C
+125C
+75C
+50C
+25C
+0C
-25C
-55C
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all
electrical and process specifications.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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