TriQuint Semiconductor Inc TGA8349-SCC Datasheet
T R I Q U I N T S E M I C O N D U C T O R , I N C .
TGA8349-SCC Gain Block Amplifier
8349
DC to 14-GHz Frequency Range
●
1.2:1 Input SWR, 1.3:1 Output SWR
●
11-dB Small Signal Gain
●
16-dBm Output Power at 1 -dB Gain Compression at Midband
●
3.1-dB Noise Figure at Midband
●
3,4290 x 2,2860 x 0,101 mm (0.135 x 0.090 x 0.004 in.)
●
PHOTO ENLARGEMENT
DESCRIPTION
The TriQuint TGA8349 -SCC is a GaAs monolithic low -noise distributed amplifier designed
for use as a multi -octave general-purpose gain block. Nine 122 -µm gate width FETs provide 11-dB
nominal gain and 3.1- dB noise figure from DC to 14 -GHz. Typical power output is 16-dBm at
1-dB gain compression. Typical input SWR is 1.2:1 and output SWR is 1.3:1. Ground is provided to
the circuitry through vias to the backside metallization.The DC to 14 -GHz frequency range, dual - gate
AGC control and gain-flatness characteristics make the TGA8349 -SCC suitable for many system
applications including fiber optic.
The TGA8349-SCC is supplied in chip for m and is engineered for high -volume automated assembly.
All metal sur faces are gold plated to be compatible with ther mocompression and thermosonic
wire- bonding processes.
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465
• www.triquint.com
TGA8349-SCC
TYPICAL
SMALL SIGNAL
POWER GAIN
TYPICAL
NOISE FIGURE
20
16
12
8
Small-Signal Gain (dB)
4
0
02 46 8101214
Frequency (GHz)
8
7
6
5
4
V+= 8 V
V+= 8 V
V
= 1.5 V
= 1.5 V
V
CTR L
CTRL
+
+
= 80 mA
I
= 80 mA
I
T A= 25° C
= 25°C
T
A
V+= 8 V
V+= 8 V
V
= 1.5 V
CTR L
= 1.5 V
V
CTRL
+
+
= 80 mA
I
= 80 mA
I
T A= 25° C
= 25°C
T
A
TYPICAL
OUTPUT POWER
P
1dB
3
Noise Figure (dB)
2
1
0
02 46 8101214
Frequency (GHz)
20
16
12
8
Output Power (dBm)
4
0
0246 8101214
Frequency (GHz)
V+= 8 V
V+= 8 V
V
= 1.5 V
CTR L
= 1.5 V
V
CTRL
+
+
= 80 mA
I
= 80 mA
I
T A= 25° C
= 25°C
T
A
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465
• www.triquint.com
2
TGA8349-SCC
TYPICAL
RETURN LOSS
ABSOLUTE
MAXIMUM RATINGS
0
10
20
30
V+= 8 V
V+= 8 V
= 1.5 V
V
V
= 1.5 V
CTRL
CTR L
+
+
= 80 mA
I
= 80 mA
I
T A= 25° C
= 25°C
T
A
Return Loss (dB)
40
Input
Input
Output
50
0 2 4 6 8 10 12 14
Output
Frequency (GHz)
Positive supply voltage, V
Positive supply voltage range with respect to negative supply voltage, V+Positive supply voltage range with r espect to gain control voltage, V
+
.................................................................................................................. 13 V
V–.............................. 0 V to 13 V
-
V+.............................. 0 V to -13 V
CTRL
Negative supply voltage range, VG1............................................................................................-5 V to 0 V
Gain control voltage range, V
................................................................................................-5 V to 4 V
CTRL
Positive supply current, I+.............................................................................................................. 144 mA
Power dissipation, PD, at (or below) 25°C base-plate temperatur e* ...................................................... 2.6 W
Input continuous wave power, PIN.................................................................................................... 23 dBm
Operating channel temperature, TCH** ......................................................... ..................................... 150°C
Mounting temperature (30 sec), TM.................................................................................................. 320°C
Storage temperature range, T
Ratings over channel temperature range, TCH(unless otherwise noted)
............................................................................................-65 to 150°C
STG
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any oth er conditions beyond
those indicated under “RF Characteristics” is not implied. Exposure to absolute maximum rated conditions for
extended periods may affect device reliability.
* For operation above 25°C base -plate temperature, derate linearly at the rate of 5.5 mW/5C.
** Operating channel temperature directly affects the device MTTF. For maximum life, it is r ecommended that
channel temperature be maintained at the lowest possible level.
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465
• www.triquint.com
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