TriQuint Semiconductor Inc TGA8226-SCC Datasheet
Product Data Sheet
2 - 6 GHz Gain Block Amplifier TGA8226-SCC
Key Features and Performance
• 2 to 6 GHz Frequency Range
• 13.5 dB Gain
• 17 dBm Output Power at 1 dB Gain
Compression
• 5.5 dB Noise Figure
• Operates from Single 15V Supply
• 1.47 x 1.85 x 0.15 mm (0.058 x 0.073 x
0.006 in.)
Description
The TriQuint TGA8226-SCC is a self biased distributed amplifier and operates from
a single 15 V supply. Four 457 um FETs produce a typical gain greater than 13.5
dB, with input and output SWRs less than 2:1. Direct cascading without additional
components is possible by using the on-chip blocking capacitors. Ground is
provided to the circuitry through vias to the backside metallization.
Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attachment methods as well as thermocompression and thermosonic wirebonding processes. The TGA8226-SCC is available in chip form and is readily
assembled using automated equipment.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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TYPICAL
SMALL-SIGNAL
POWER GAIN
Product Data Sheet
TGA8226-SCC
TYPICAL
NOISE FIGURE
TYPICAL
OUTPUT POWER
P
1dB
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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TYPICAL
…
/
INPUT RETURN LOSS
TYPICAL
OUTPUT RETURN LOSS
Product Data Sheet
TGA8226-SCC
ABSOLUTE
MAXIMUM
RATINGS
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Positive supply voltage, V+…………………………………………………………………………… 18 V
Pow er dissipation, P
Input continuous-w ave pow er, P
Operating Channel temperature, T
Mounting temperature (30 sec.), T
Storage temperature range, T
Ratings over operating channel temperature range, T
at (or below) 25oC base-plate temperature *………………………………
D
…………………………………………………………………
IN
**…………………………………………………………………150oC
CH
……………………………………………………………………320oC
M
………………………………………………………………………-65 to 150oC
STG
(unless otherwise note d).
CH
4.4 W
23 dB
Stresses beyond those listed under "A bsolute Maximum Ratings" may cause per manent damage to the device.
These are stress ratings only and f unctional operation of the device at these or any other conditions beyond
those indicated under "RF Charac teristics" is not implied. Exposure to abs olute maximum rated conditions
for extended periods may af f ect device reliability.
o
* For operation abov e 25
C base-plate temperature, derate linearly at the rate of 9.2 mW
** Operating channel temperature ( T
) directly affects the device MTTF. For maximum life, it is recommended
CH
o
C.
that channel temperature be maintained at the low est possible level.
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