TriQuint Semiconductor Inc TGA1319C Datasheet

Advance Product Information

August 29, 2000

Ka Band Wideband LNA/Driver TGA1319C

Key Features and Performance

• 0.15um pHEMT Technology

• 16-30 GHz Frequency Range

• 2.25 dB Nominal Noise Figure midband

• 21 dB Nominal Gain

• 14 dBm Pout

Chip Dimensions 2.169 mm x .904 mm

•5V, 60 mA

Primary Applications

• Point-to-Point Radio

• Point-to-Multipoint Communications

3

2.5

NF (dB)

2

1.5

21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26

Frequency

Typical NF @ 25C

25

20

15

10

Gain (dB)

5

0

10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

Freque ncy ( GHz)

0

-5

-10

-15

-20

Input RL (dB)

-25

-30
10 11 12 13 14 15 1 6 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

Freque ncy ( GHz)

Typical S11 @ 25C

0

-5

-10

-15

-20

Output RL (dB)

-25

-30
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

Frequ ency ( GHz)

Typical Gain @ 25C

Typical S22 @ 25C

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

1

Advance Product Information

August 29, 2000

TGA1319C

RFin RFout

TGA1319C- Recommended Assembly Drawing

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com