TriQuint Semiconductor Inc TGA1319A Datasheet

Advance Product Information

August 29, 2000

Ka Band Low Noise Amplifier TGA1319A

Key Features and Performance

• 0.15um pHEMT Technology

• 21-27 GHz Frequency Range

• 2 dB Nominal Noise Figure

• 19 dB Nominal Gain

• 12 dBm Pout

•3V, 45 mA

Chip Dimensions 1.985 mm x .980 mm

Primary Applications

• Point-to-Point Radio

Preliminary Data, 2 Fixtured samples @ 25C

• Point-to-Multipoint Communications

3

2.8

2.6

2.4

2.2

2

1.8

1.6

1.4

1.2

1

15 16 17 18 19 20 21 22 23 24 25 26 27

Typical NF @ 25C

30

28

26

24

22

20

18

16

14

12

10

15 16 17 18 19 20 21 22 23 24 25 26

0

-4

-8

-12

-16

-20

15 16 17 18 19 20 21 22 23 24 25 26

Typical S11 @ 25C

0

-5

-10

-15

-20

15 16 17 18 19 20 21 22 23 24 25 26

Typical Gain @ 25C

Typical S22 @ 25C

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

1

Vd=3V

Advance Product Information

August 29, 2000

TGA1319A

RFin

100
pF

100
pF

100
pF

RFout

100
pF

Vg1

TGA1319A - Recommended Assembly Drawing

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

Vg2