TriQuint Semiconductor Inc TGA1307-EPU Datasheet
Advance Product Information
EG1307 Fixtured Small Signal Data, Wafer 991880601
May 16, 2000
Ka Band Low Noise Amplifier TGA1307-EPU
Key Features and Performance
• 0.25um pHEMT Technology
• 23-29 GHz Frequency Range
• 3.1 dB Nominal Noise Figure 28GHz
• 17 dB Nominal Gain
• OTOI > 22dBm
• 5V, 50 mA Self-Bias
Chip Dimensions 2.54 mm x 1.15 mm
10
9
8
7
6
Typical NF @ 25C
5
4
3
R/C 35_35
2
R/C 50_50
R/C 59_59
1
R/C 70_70
R/C 75_75
0
18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
25
Vd = 5V, Id1
Frequency (G Hz)
Vd = 5V, Id1
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
≈≈≈≈
45mA
≈≈≈≈
45mA
Typical Gain @ 25C
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
20
15
10
5
0
R/C 9_21
R/C 40_35
R/C 47_31
R/C 44_15
R/C 50_30
18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Frequency (GHz)
1
Advance Product Information
May 16, 2000
TGA1307
EG1307 Fixtured Small Signal Data, Wafer 991880603
0
-2
-4
-6
-8
R/C 50_32
-10
-12
R/C 59_30
R/C 70_30
R/C 35_31
R/C 75_15
18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
EG1307 Fixtured Small Signal Data, Wafer 991880603
25
20
15
R/C 50_32
10
R/C 59_30
R/C 70_30
R/C 35_31
R/C 75_15
5
0
18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Vd = 5V, Id1
Vd = 5V, Id1
≈≈≈≈
45mA
Frequency (GHz)
≈≈≈≈
45mA
Frequency (GHz)
EG1307 Fixtured Small Signal Data, Wafer 991880603
0
-10
-20
-30
-40
-50
-60
-70
-80
R/C 50_32
R/C 59_30
R/C 70_30
R/C 35_31
R/C 75_15
18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Vd = 5V, Id1
EG1307 Fixtured Small Signal Data, Wafer 991880603
0
-2
-4
-6
-8
R/C 50_32
-10
-12
R/C 59_30
R/C 70_30
R/C 35_31
R/C 75_15
18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Frequency (GHz)
Vd = 5V, Id1
Frequency (GHz)
≈≈≈≈
45mA
≈≈≈≈
45mA
Typical Small Signal S-parameters at 25C.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
May 16, 2000
TGA1307
EG1307 S11 Lot 9918806 wafer 2
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-10
-20
-30
-40
-50
-60
-70
Temp: -60
Temp: -25
Temp: 0
Temp: 25
Temp: 50
Temp: 75
18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
0
Temp: -60
Temp: -25
Temp: 0
Temp: 25
Temp: 50
Temp: 75
18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
5V R/C 60 2 4
Frequency (G Hz)
EG1307 S12 Lot 9918806 wafer 2
5V R/C 60 2 4
Frequency (GHz)
EG1307 S21 Lot 9918806 wafer 2
25
20
15
Temp: -60
10
5
0
-2
-4
-6
-8
-10
-12
Temp: -25
Temp: 0
Temp: 25
Temp: 50
Temp: 75
18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
0
Temp: -60
Temp: -25
Temp: 0
Temp: 25
Temp: 50
Temp: 75
18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
5V R/C 60 2 4
Frequency (G Hz)
EG1307 S22 Lot 9918806 wafer 2
5V R/C 60 2 4
Frequency (GHz)
Small Signal S-parameters over temperature.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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