TriQuint Semiconductor Inc TGA1172 Datasheet
Advance Product Information
3
2
March 21, 2000
27 - 32 GHz 1W Power Amplifier TGA1172
Key Features
• 0.25 um pHEMT Technology
• 18 dB Gain at 28 GHz
• 29 dBm Nominal P1dB
• 37dBm OTOI typical at 28GHz
• Input/Output RL < -10 dB
• Bias 6 - 7V @ 630 mA
Chip Dimensions 2.69 mm x 1.37 mm
Small Signal Gain
15
10
6V, 630 mA
5
0
-5
-10
Return Loss (dB)
-15
-20
10 15 20 25 30 35 40
S11
S21
S2
Frequency (GHz)
Output Power at P1dB
32
31
30
29
28
P1dB (dBm)
27
26
25
26 27 28 29 30 31 32
6V, 630 mA
25
15
5
-5
-15
-25
-35
-45
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
• Ka Band Sat-Com
Vd1
RF
IN
Gain (dB)
600µm 1200µm 2400µm
Vg1
Vd1
Vd2
Vg2
Vg2
Vd2
Amplifier Topology
Output Third Order Intercept
40
39
38
37
36
35
34
33
Output TOI (dBm)
32
31
30
26 27 28 29 30 31 32 3
Vd3
Vg3
Vg3
Vd3
6V, 630 mA
RF
OUT
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Frequency (GHz)
1
Advance Product Information
TGA1172 Single tone pout and IMD3 vs Pin
Freque ncy = 28GHz, 6V, 630 mA
March 21, 2000
TGA1172
25
20
15
10
Pout (dBm)
SCL Power
5
0
-5 -4 -3 -2 -1 0 1 2 3 4 5
Pin (dBm)
IMD3
10
0
-10
-20
-30
-40
IMD3 (dBm)
TGA1172 Single tone pout and IMD3 vs Pin
Frequency = 31GHz, 6V, 630 mA
25
20
15
10
Pout (dBm)
SCL Power
5
0
-5 -4 -3 -2 -1 0 1 2 3 4 5
Pin (dBm)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
IMD3
10
0
-10
-20
-30
-40
IMD3 (dBm)
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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